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硫族锗化物的合成、性质及应用

Synthesis, Properties and Applications of Germanium Chalcogenides.

作者信息

Privitera Stefania M S

机构信息

Institute for Microelectronic and Microsystems (IMM), National Research Council (CNR), Zona Industriale Ottava Strada 5, 95121 Catania, Italy.

出版信息

Nanomaterials (Basel). 2022 Aug 25;12(17):2925. doi: 10.3390/nano12172925.

DOI:10.3390/nano12172925
PMID:36079963
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9457559/
Abstract

Germanium (Ge) chalcogenides are characterized by unique properties which make these materials interesting for a very wide range of applications, from phase change memories to ovonic threshold switches, from photonics to thermoelectric and photovoltaic devices [...].

摘要

锗硫族化合物具有独特的性质，这使得这些材料在从相变存储器到双向阈值开关、从光子学器件到热电和光伏器件等非常广泛的应用领域中备受关注。

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Structural and Electrical Properties of Annealed GeSbTe Films Grown on Flexible Polyimide.在柔性聚酰亚胺上生长的退火锗锑碲薄膜的结构和电学性质
Nanomaterials (Basel). 2022 Jun 10;12(12):2001. doi: 10.3390/nano12122001.
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Phase Separation in Ge-Rich GeSbTe at Different Length Scales: Melt-Quenched Bulk versus Annealed Thin Films.富锗的锗锑碲在不同长度尺度下的相分离：熔体淬火块体与退火薄膜
Nanomaterials (Basel). 2022 May 18;12(10):1717. doi: 10.3390/nano12101717.
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Structural Assessment of Interfaces in Projected Phase-Change Memory.投影式相变存储器中界面的结构评估
Nanomaterials (Basel). 2022 May 17;12(10):1702. doi: 10.3390/nano12101702.
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Interface Analysis of MOCVD Grown GeTe/SbTe and Ge-Rich Ge-Sb-Te/SbTe Core-Shell Nanowires.MOCVD生长的GeTe/SbTe和富Ge的Ge-Sb-Te/SbTe核壳纳米线的界面分析
Nanomaterials (Basel). 2022 May 10;12(10):1623. doi: 10.3390/nano12101623.
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Growth, Electronic and Electrical Characterization of Ge-Rich Ge-Sb-Te Alloy.富锗锗锑碲合金的生长、电学和电气特性
Nanomaterials (Basel). 2022 Apr 13;12(8):1340. doi: 10.3390/nano12081340.
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Interface Formation during the Growth of Phase Change Material Heterostructures Based on Ge-Rich Ge-Sb-Te Alloys.基于富锗锗锑碲合金的相变材料异质结构生长过程中的界面形成
Nanomaterials (Basel). 2022 Mar 18;12(6):1007. doi: 10.3390/nano12061007.
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