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髂静脉支架植入术对分叉处血流动力学的影响机制。

The influencing mechanism of iliac vein stent implantation for hemodynamics at the bifurcation.

机构信息

College of Mechanical Engineering, Inner Mongolia University of Technology, Hohhot, P.R. China.

The First Affiliated Hospital of University of Science and Technology of China, Hefei, P.R. China.

出版信息

Comput Methods Biomech Biomed Engin. 2023 Sep;26(12):1452-1461. doi: 10.1080/10255842.2022.2120352. Epub 2022 Sep 9.

DOI:10.1080/10255842.2022.2120352
PMID:36082958
Abstract

In the intervention with stent implantation for iliac vein compression syndrome (IVCS), it remains unclear about the influencing mechanism of the structure and implantation position of the stent for the hemodynamics of the affected site. In this paper, an iliac vein model was established. Besides, the computational fluid dynamics (CFD) was utilized to analyze the time-averaged wall shear stress (TAWSS) and oscillatory shear index (OSI) in a sine period after stent implantation based on the three different implantation positions of two iliac vein stents (the left branch outlet, contralateral disturbed flow and main iliac vein). The influence of the structure and implantation position of the stent on blood flow was revealed. These findings were verified by the particle image velocimetry (PIV) experiment. The results indicated that the maximum blood flow velocity of the iliac vein decreased after the stent implantation. Among the three positions, the influence of stent implantation on the iliac vein blood flow was the least when the stent implantation was performed at the left branch outlet; the influence of stent implantation on the iliac vein blood flow was the greatest when the stent implantation was performed at the contralateral disturbed flow. Moreover, there was little influence of Venastent implantation on the blood flow. These results could provide a scientific foundation for implantation treatment and stent design related to IVCS.

摘要

在髂静脉压迫综合征(IVCS)的支架植入干预中,支架的结构和植入位置对受影响部位血流动力学的影响机制仍不清楚。本文建立了髂静脉模型,利用计算流体动力学(CFD)方法,基于两种髂静脉支架(左支出口、对侧干扰流和主髂静脉)的三种不同植入位置,分析了支架植入后正弦周期内的时均壁切应力(TAWSS)和振荡剪切指数(OSI)。揭示了支架的结构和植入位置对血流的影响,并用粒子图像测速(PIV)实验进行了验证。结果表明,支架植入后髂静脉最大血流速度降低。在这三个位置中,当支架植入在左支出口时,支架植入对髂静脉血流的影响最小;当支架植入在对侧干扰流时,支架植入对髂静脉血流的影响最大。此外,Venastent 植入对血流的影响较小。这些结果可为 IVCS 相关的植入治疗和支架设计提供科学依据。

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