Bork Alexander H, Ackerl Norbert, Reuteler Joakim, Jog Sachin, Gut David, Zboray Robert, Müller Christoph R
Laboratory of Energy Science and Engineering, Department of Mechanical and Process Engineering, ETH Zurich CH-8092 Zürich Switzerland
NAPho - Norbert Ackerl Photonics CH-8049 Zürich Switzerland.
J Mater Chem A Mater. 2022 Jul 8;10(32):16803-16812. doi: 10.1039/d2ta02897b. eCollection 2022 Aug 17.
MgO is a promising solid oxide-based sorbent to capture anthropogenic CO emissions due to its high theoretical gravimetric CO uptake and its abundance. When MgO is coated with alkali metal salts such as LiNO, NaNO, KNO, or their mixtures, the kinetics of the CO uptake reaction is significantly faster resulting in a 15 times higher CO uptake compared to bare MgO. However, the underlying mechanism that leads to this dramatic increase in the carbonation rate is still unclear. This study aims to determine the most favourable location for the nucleation and growth of MgCO and more specifically, whether the carbonation occurs preferentially at the buried interface, the triple phase boundary (TPB), and/or inside the molten salt of the NaNO-MgO system. For this purpose, a model system consisting of a MgO single crystal that is structured by ultra-short pulse laser ablation and coated with NaNO as the promoter is used. To identify the location of nucleation and growth of MgCO, micro X-ray computed tomography, scanning electron microscopy, Raman microspectroscopy and optical profilometry were applied. We found that MgCO forms at the NaNO/MgO interface and not inside the melt. Moreover, there was no preferential nucleation of MgCO at the TPB when compared to the buried interface. Furthermore, it is found that there is no observable CO diffusion limitation in the nucleation step. However, it was observed that CO diffusion limits MgCO crystal growth, the growth rate of MgCO is approximately an order of magnitude faster in shallow grooves compared to that in deep grooves.
氧化镁因其较高的理论重量一氧化碳吸附量及其丰富性,是一种很有前景的用于捕获人为一氧化碳排放的固体氧化物基吸附剂。当氧化镁涂覆有碱金属盐如硝酸锂、硝酸钠、硝酸钾或它们的混合物时,一氧化碳吸附反应的动力学显著加快,与未涂覆的氧化镁相比,一氧化碳吸附量提高了15倍。然而,导致碳酸化速率如此显著增加的潜在机制仍不清楚。本研究旨在确定碳酸镁成核和生长的最有利位置,更具体地说,碳酸化是否优先发生在掩埋界面、三相边界(TPB)和/或硝酸钠 - 氧化镁体系的熔盐内部。为此,使用了一个由氧化镁单晶组成的模型系统,该单晶通过超短脉冲激光烧蚀构建,并涂覆有作为促进剂的硝酸钠。为了确定碳酸镁成核和生长的位置,应用了微型X射线计算机断层扫描、扫描电子显微镜、拉曼显微光谱和光学轮廓测量法。我们发现碳酸镁在硝酸钠/氧化镁界面形成,而不是在熔体内部形成。此外,与掩埋界面相比,在三相边界处没有碳酸镁的优先成核。此外,发现在成核步骤中没有可观察到的一氧化碳扩散限制。然而,观察到一氧化碳扩散限制了碳酸镁晶体的生长,与深槽相比,浅槽中碳酸镁的生长速率快约一个数量级。