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Zr-和Hf-UiO-66中缺陷的振动光谱研究

Vibrational spectroscopy investigation of defects in Zr- and Hf-UiO-66.

作者信息

Yost Brandon T, Gibbons Bradley, Wilson Addison, Morris Amanda J, McNeil L E

机构信息

Department of Physics and Astronomy, University of North Carolina Chapel Hill North Carolina 27599 USA

Department of Chemistry, Virginia Polytechnic Institute and State University Blacksburg Virginia 24061 USA.

出版信息

RSC Adv. 2022 Aug 11;12(35):22440-22447. doi: 10.1039/d2ra03131k. eCollection 2022 Aug 10.

Abstract

Defect engineering in metal-organic framework compounds has allowed for improvements in catalysis-based functionalities, gas sensing, and gas storage. Metal-organic framework UiO-66 compounds with Zr- and Hf-based metal secondary building units were studied with Raman and infrared vibrational spectroscopy. Missing linker and missing cluster defects were engineered into the crystal structure a modulated synthesis technique. Missing cluster defects in Hf-UiO-66 are first characterized by powder X-ray diffraction (PXRD) whereby two low-angle peaks were fit to extract the relative quantity of topology in four defective samples. A monotonic red-shift of the Raman-active Hf-O coordination bond vibration is interpreted as a signature of missing cluster defects, resulting from less-rigid charge-balancing monocarboxylate formate ions replacing the dicarboxylate linker molecule. This signature is hypothesized to be independent of the topology in which the defects appear. Missing linker defects in Zr-UiO-66 are characterized by infrared absorption spectroscopy by the quenching of C-C and C-H vibrational modes confined to the linker molecule. Together, Raman and infrared vibrational spectroscopies coupled with standard characterization techniques are employed to directly probe the nature of defects as well as offer new characterization tools for missing cluster defects in UiO-66.

摘要

金属有机骨架化合物中的缺陷工程已实现了基于催化的功能、气体传感和气体存储方面的改进。利用拉曼光谱和红外振动光谱对具有锆基和铪基金属二级构筑单元的金属有机骨架UiO-66化合物进行了研究。通过一种调制合成技术,将缺失连接体和缺失簇缺陷引入到晶体结构中。首先通过粉末X射线衍射(PXRD)对Hf-UiO-66中的缺失簇缺陷进行表征,通过拟合两个低角度峰来提取四个缺陷样品中拓扑结构的相对量。拉曼活性的Hf-O配位键振动的单调红移被解释为缺失簇缺陷的特征,这是由于刚性较小的电荷平衡单羧酸甲酸根离子取代了二羧酸连接体分子所致。据推测,这一特征与缺陷出现的拓扑结构无关。通过红外吸收光谱对Zr-UiO-66中的缺失连接体缺陷进行表征,其表现为局限于连接体分子的C-C和C-H振动模式的猝灭。拉曼光谱和红外振动光谱与标准表征技术相结合,可直接探测缺陷的性质,并为UiO-66中的缺失簇缺陷提供新的表征工具。

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