Li Zhe, Delgado Fernando, Du Mei, He Chen, Schouteden Koen, Haesendonck Chris Van, Janssens Ewald, Arnau Andres, Lievens Peter, Cerda Jorge I
State Key Laboratory on Tunable Laser Technology, Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System, School of Science, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, People's Republic of China.
Instituto de Estudios Avanzados IUDEA, Departamento de Física, Universidad de La Laguna, 38203 Tenerife, Spain.
J Phys Condens Matter. 2022 Oct 5;34(47). doi: 10.1088/1361-648X/ac93db.
Individual magnetic transition metal dopants in a solid host usually exhibit relatively small spin excitation energies of a few meV. Using scanning tunneling microscopy and inelastic electron tunneling spectroscopy (IETS) techniques, we have observed a high spin excitation energy around 36 meV for an individual Co substitutional dopant in ultrathin NaCl films. In contrast, the Cr dopant in the NaCl film shows much lower spin excitation energy around 2.5 meV. Electronic multiplet calculations combined with first-principles calculations confirm the spin excitation induced IETS, and quantitatively reveal the out-of-plane magnetic anisotropies for both Co and Cr. They also allow reproducing the experimentally observed redshift in the spin excitations of Co dimers and ascribe it to a charge and geometry redistribution.
固体基质中的单个磁性过渡金属掺杂剂通常表现出相对较小的自旋激发能，约为几毫电子伏特。利用扫描隧道显微镜和非弹性电子隧穿谱（IETS）技术，我们在超薄氯化钠薄膜中观察到单个钴替代掺杂剂的自旋激发能高达约36毫电子伏特。相比之下，氯化钠薄膜中的铬掺杂剂的自旋激发能要低得多，约为2.5毫电子伏特。电子多重态计算与第一性原理计算相结合，证实了自旋激发诱导的IETS，并定量揭示了钴和铬的面外磁各向异性。它们还能够重现实验观测到的钴二聚体自旋激发中的红移现象，并将其归因于电荷和几何结构的重新分布。
