Moreno Rubio Jorge Julián, Angarita Malaver Edison Ferney, Mesa Lara Jairo Alonso
Grupo de Investigación en Telecomunicaciones-GINTEL, Universidad Pedagógica y Tecnológica de Colombia, Sogamoso 152211, Colombia.
Micromachines (Basel). 2022 Sep 17;13(9):1541. doi: 10.3390/mi13091541.
This paper presents a strategy to design ultrawideband power amplifiers with a fractional bandwidth of approximately 200%. It exploits a simple output matching network, which consists of a series transmission line together with a shunt stub, to compensate the output parasitic network of the device. Following this, a multisection transformer is implemented to obtain the optimal load at the intrinsic drain plane. As design examples, several output matching networks were designed for two different size GaN HEMT devices. One of these examples was implemented and characterized, and a drain efficiency from 52% to 70% and an output power between 40 dBm and 42.5 dBm were obtained, over 67% of the 5G sub-6-GHz band (i.e., 0.1 to 4 GHz). The aforementioned results, to the best of the authors' knowledge, represent the state of the art in broadband power amplifiers.
本文提出了一种设计分数带宽约为200%的超宽带功率放大器的策略。它利用一个简单的输出匹配网络，该网络由一条串联传输线和一个并联短截线组成，以补偿器件的输出寄生网络。在此之后，实现了一个多节变压器，以在本征漏极平面获得最佳负载。作为设计示例，针对两种不同尺寸的氮化镓高电子迁移率晶体管（GaN HEMT）器件设计了几个输出匹配网络。其中一个示例得到了实现和表征，在5G低于6GHz频段（即0.1至4GHz）的67%以上频段内，获得了52%至70%的漏极效率以及40dBm至42.5dBm的输出功率。据作者所知，上述结果代表了宽带功率放大器的当前技术水平。
