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Passivation of Mid-Gap Electronic States at Calcium Aluminosilicate Glass Surfaces upon Water Exposure: An Study.

作者信息

Antony Andrew C, Goyal Sushmit, Park Hyunhang, Banerjee Joy, Smith Nicholas J, Agnello Gabriel, Manley Robert G

机构信息

Corning Incorporated, Sullivan Park Research Center, Corning, New York 14831, United States.

Corning Technology Center Korea, Asan, Chungcheongnam-do 31454, South Korea.

出版信息

J Phys Chem B. 2022 Oct 6;126(39):7709-7719. doi: 10.1021/acs.jpcb.2c02550. Epub 2022 Sep 23.

DOI:10.1021/acs.jpcb.2c02550
PMID:36149757
Abstract

When a clean glass surface is exposed to humid air, a thin water layer forms on the hydrophilic surface. Using molecular dynamics, we simulate the changes in the electronic structure of a CaO-AlO-SiO glass model upon vacuum fracture and subsequent exposure to HO. When the glass is fractured, dangling bonds form, which lower the band gap of the surface by ∼1.8 eV compared to the bulk value due to mid-gap surface states. When HO adsorbs onto the vacuum-fractured surface, the band gap increases to a value closer to that of the bulk band gap. Using two different hydroxylation methods, we find that the calculated band gap of the glass surface depends on the hydroxylation state. Surfaces with ∼4.5 OH/nm have smaller band gaps due to unfilled surface states, and surfaces with ∼2.5 OH/nm have larger band gaps with no apparent unfilled surface states. The resulting changes in the electronic structure, quantified by electron affinity and work function values, are hypothesized to play an important role in the electrostatic charge transfer based on the principles of surface state theory, which posit that the density of electronic surface states determines the amount of electronic charge transfer to or from material surfaces.

摘要

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