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忆阻器电路中混沌边缘的动作电位和混沌。

Action potential and chaos near the edge of chaos in memristive circuits.

机构信息

Institute of Modern Circuit and Intelligent Information, Hangzhou Dianzi University, Hangzhou 310018, China.

Department of Electrical Engineering, City University of Hong Kong, Hong Kong 999077, China.

出版信息

Chaos. 2022 Sep;32(9):093101. doi: 10.1063/5.0097075.

Abstract

Memristor-based neuromorphic systems have a neuro-bionic function, which is critical for possibly overcoming Moore's law limitation and the von Neumann bottleneck problem. To explore neural behaviors and complexity mechanisms in memristive circuits, this paper proposes an N-type locally active memristor, based on which a third-order memristive circuit is constructed. Theoretical analysis shows that the memristive circuit can exhibit not only various action potentials but also self-sustained oscillation and chaos. Based on Chua's theory of local activity, this paper finds that the neural behaviors and chaos emerge near the edge of chaos through subcritical Hopf bifurcation, in which the small unstable limit cycle is depicted by the dividing line between the attraction basin of the large stable limit cycle and the attraction basin of the stable equilibrium point. Furthermore, an analog circuit is designed to imitate the action potentials and chaos, and the simulation results are in agreement with the theoretical analysis.

摘要

基于忆阻器的神经形态系统具有神经仿生功能,这对于可能克服摩尔定律限制和冯·诺依曼瓶颈问题至关重要。为了探索忆阻电路中的神经行为和复杂机制,本文提出了一种 N 型局部激活忆阻器,并基于此构建了一个三阶忆阻电路。理论分析表明,该忆阻电路不仅可以表现出各种动作电位,还可以产生自持续振荡和混沌。基于 Chua 的局部活动理论,本文发现神经行为和混沌通过亚临界 Hopf 分岔出现在混沌边缘,其中小的不稳定极限环由大稳定极限环的吸引域和稳定平衡点的吸引域之间的分界线描绘。此外,还设计了一个模拟电路来模拟动作电位和混沌,并且模拟结果与理论分析一致。

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