Schindler Frank, Tsirkin Stepan S, Neupert Titus, Andrei Bernevig B, Wieder Benjamin J
Princeton Center for Theoretical Science, Princeton University, Princeton, NJ, 08544, USA.
Department of Physics, University of Zurich, Winterthurerstrasse 190, 8057, Zurich, Switzerland.
Nat Commun. 2022 Oct 2;13(1):5791. doi: 10.1038/s41467-022-33471-x.
In insulating crystals, it was previously shown that defects with two fewer dimensions than the bulk can bind topological electronic states. We here further extend the classification of topological defect states by demonstrating that the corners of crystalline defects with integer Burgers vectors can bind 0D higher-order end (HEND) states with anomalous charge and spin. We demonstrate that HEND states are intrinsic topological consequences of the bulk electronic structure and introduce new bulk topological invariants that are predictive of HEND dislocation states in solid-state materials. We demonstrate the presence of first-order 0D defect states in PbTe monolayers and HEND states in 3D SnTe crystals. We relate our analysis to magnetic flux insertion in insulating crystals. We find that π-flux tubes in inversion- and time-reversal-symmetric (helical) higher-order topological insulators bind Kramers pairs of spin-charge-separated HEND states, which represent observable signatures of anomalous surface half quantum spin Hall states.
在绝缘晶体中,先前的研究表明,维度比整体少两个的缺陷能够束缚拓扑电子态。我们在此进一步扩展拓扑缺陷态的分类,证明具有整数伯格斯矢量的晶体缺陷的角能够束缚具有反常电荷和自旋的零维高阶端(HEND)态。我们证明HEND态是体电子结构的固有拓扑结果,并引入了新的体拓扑不变量,这些不变量可预测固态材料中的HEND位错态。我们证明了PbTe单层中一阶零维缺陷态的存在以及三维SnTe晶体中HEND态的存在。我们将我们的分析与绝缘晶体中的磁通量插入联系起来。我们发现,在具有反演和时间反演对称性(螺旋)的高阶拓扑绝缘体中的π磁通管束缚了自旋 - 电荷分离的HEND态的克莱默对,这代表了反常表面半量子自旋霍尔态的可观测特征。