Zhang Dandan, Liu Yan-Hua, Zhu Lianqing
Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science and Technology University, Beijing 100192, P. R. China.
School of Optoelectronic Science and Engineering, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou, Jiangsu 215006, P. R. China.
iScience. 2022 Sep 11;25(10):105111. doi: 10.1016/j.isci.2022.105111. eCollection 2022 Oct 21.
Due to the outstanding electron injection/transport capability of ZnO nanoparticles (NPs), quantum-dot light-emitting diodes (QLEDs) are commonly constructed by employing a hybrid device structure with ZnO electron-transporting layer and organic hole-transporting layer. However, the emission quenching of quantum dots and excessive electron injection induced by ZnO NPs also limits the device efficiency and operational stability. Here, diethylenetriamine (DETA) molecules as the ligands are introduced to modify the surface of ZnO NPs, which not only passivate the surface defects of ZnO but also suppress the overwhelming electron injection in the QLED. As a result, the device based on the DETA-modified ZnO NPs exhibits a peak external quantum efficiency of 23.7%, corresponding to an enhancement factor of 129% in comparison with that of the device with as-synthesized ZnO as the electron-transporting layer. The easy and feasible strategy may also be applicable to other photoelectric devices, such as solar cells and photodetectors.
由于氧化锌纳米颗粒（NPs）具有出色的电子注入/传输能力，量子点发光二极管（QLED）通常采用具有氧化锌电子传输层和有机空穴传输层的混合器件结构来构建。然而，氧化锌纳米颗粒引起的量子点发射猝灭和过量电子注入也限制了器件效率和运行稳定性。在此，引入二亚乙基三胺（DETA）分子作为配体来修饰氧化锌纳米颗粒的表面，这不仅钝化了氧化锌的表面缺陷，还抑制了量子点发光二极管中过量的电子注入。结果，基于DETA修饰的氧化锌纳米颗粒的器件表现出23.7%的峰值外量子效率，与以合成态氧化锌作为电子传输层的器件相比，增强因子为129%。这种简单可行的策略也可能适用于其他光电器件，如太阳能电池和光电探测器。
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