强脉冲光后处理改善ZnO纳米颗粒电子传输层的时间相关特性对量子点发光二极管空穴-电子注入平衡的影响

Effect of Time-Dependent Characteristics of ZnO Nanoparticles Electron Transport Layer Improved by Intense-Pulsed Light Post-Treatment on Hole-Electron Injection Balance of Quantum-Dot Light-Emitting Diodes.

作者信息

Han Young Joon, Kang Kyung-Tae, Ju Byeong-Kwon, Cho Kwan Hyun

机构信息

Manufacturing Process Platform Research and Development Department, Korea Institute of Industrial Technology (KITECH), 143 Hanggaul-ro, Sangnok-gu, Ansan-si 15588, Korea.

Department of Electrical and Electronics Engineering, College of Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea.

出版信息

Materials (Basel). 2020 Nov 9;13(21):5041. doi: 10.3390/ma13215041.

We investigated the effect of intense-pulsed light (IPL) post-treatment on the time-dependent characteristics of ZnO nanoparticles (NPs) used as an electron transport layer (ETL) of quantum-dot light-emitting diodes (QLEDs). The time-dependent characteristics of the charge injection balance in QLEDs was observed by fabrication and analysis of single carrier devices (SCDs), and it was confirmed that the time-dependent characteristics of the ZnO NPs affect the device characteristics of QLEDs. Stabilization of the ZnO NPs film properties for improvement of the charge injection balance in QLEDs was achieved by controlling the current density characteristics via filling of the oxygen vacancies by IPL post-treatment.