Faculty of Chemical Engineering and Biotechnologies, University Politehnica of Bucharest, 1-7 Gheorghe Polizu St, Bucharest, 011061, Romania.
Department of Chemistry and Chemical Engineering, Ovidius University, 124 Mamaia Blvd, Constanta, 900527, Romania.
Analyst. 2022 Oct 24;147(21):4730-4734. doi: 10.1039/d2an01333a.
The influence of UV light irradiation on the metal ion open-circuit accumulation process is determined using a glassy carbon modified electrode with poly(2,2'-(ethan-1,2-diylbis((2-(azulen-2-ylamino)-2-oxoethyl)azandiyl))diacetic acid (polyL). A correlation analysis between the semiconductive properties of polyL film and sensing properties is performed. Photo-assisted metal ion open circuit accumulation led to the simultaneous detection of Cu(II) and Hg(II) which allowed a detection limit of 0.4 nM and 0.7 nM for Cu(II) and Hg(II), respectively.
采用玻璃碳修饰电极，利用聚（2,2'-(乙烷-1,2-二基双((2-(薁-2-基氨基)-2-氧代乙基)偶氮二基))二乙酸（polyL）确定了紫外光照射对金属离子开路累积过程的影响。对聚 L 薄膜的半导体性能和传感性能之间的相关性进行了分析。光辅助金属离子开路累积可同时检测 Cu(II)和 Hg(II)，Cu(II)和 Hg(II)的检测限分别为 0.4 nM 和 0.7 nM。
