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采用基于光栅的弱耦合纳米线的紧凑型超宽带全硅横磁模(TM)通和横电模(TE)反射偏振器。

Compact and ultra-broadband all-silicon TM-pass and TE-reflected polarizer using grating based weakly coupled nanowires.

作者信息

Wu Shengbao, Guo Zhenzhao, Feng Ting, Xiao Jinbiao, Yao X Steve

出版信息

Opt Express. 2022 Aug 15;30(17):29844-29855. doi: 10.1364/OE.459204.

Abstract

On-chip silicon polarizers with broad operating bandwidth and compact footprint have recently attracted increasing attention for their applications in large capacity and high density integrated optical systems. However, strong waveguide dispersion usually limits the bandwidth of the silicon polarizers, especially for the TM-pass polarizers. In this paper, we overcome the bandwidth limit of the TM polarizer by utilizing a novel waveguide structure composed of two weakly coupled nanowires with gratings sandwiched in between. Such a structure can effectively enlarge the bandgap for the undesired TE polarized light, while act as a low loss subwavelength metamaterial for TM polarized light over an extremely large wavelength range. In simulation, we obtain a compact polarizer of 13.6 µm × 1.3 µm in size with an ultra-broad operating bandwidth of ∼362 nm for extinction ratios (ERs) >21 dB and insertion losses (ILs) <1 dB, which covers E-, S-, C-, L-, and U-bands and part of O-band. The measurements of fabricated devices show that the device performed well in the test wavelength range from 1300 to 1600 nm with an ER >15 dB and an average IL ∼1 dB, consistent with the simulation results. This work paves a new way for designing compact and ultra-broadband on-chip polarizers.

摘要

具有宽工作带宽和紧凑尺寸的片上硅偏振器最近在大容量和高密度集成光学系统中的应用引起了越来越多的关注。然而,强波导色散通常会限制硅偏振器的带宽,尤其是对于TM模通过型偏振器。在本文中,我们通过利用一种新型波导结构克服了TM偏振器的带宽限制,该结构由两根弱耦合纳米线组成,中间夹有光栅。这种结构可以有效地扩大不需要的TE偏振光的带隙,同时在极宽的波长范围内作为TM偏振光的低损耗亚波长超材料。在模拟中,我们获得了一个尺寸为13.6 µm × 1.3 µm的紧凑型偏振器,其消光比(ER)>21 dB且插入损耗(IL)<1 dB时的超宽工作带宽约为362 nm,覆盖了E波段、S波段、C波段、L波段、U波段以及部分O波段。对制造器件的测量表明,该器件在1300至1600 nm的测试波长范围内表现良好,ER>15 dB,平均IL约为1 dB,与模拟结果一致。这项工作为设计紧凑且超宽带的片上偏振器开辟了一条新途径。

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