Zhang Jinsong, Xu Luhua, Mao Deng, D'Mello Yannick, Li Weijia, Lessard Stephane, Plant David V
Opt Express. 2022 Jan 3;30(1):326-335. doi: 10.1364/OE.447435.
We propose an all-silicon design of a multi-band transverse-magnetic-pass (TM-pass) polarizer. The device is based on one-dimensional gratings that work under different regimes that depend on the polarization. With a tapered structure, it is revealed that the operation bandwidth can be extended by multiplexing the diffraction in O-band and the reflection in S-, C-, and L-bands for the transverse-electric (TE) mode. By simulation, we achieve a 343 nm device bandwidth with insertion loss (IL) < 0.4 dB and polarization extinction ratio (PER) > 20 dB. The operation wavelength range covers commonly-used optical telecommunication bands including the O-, S-, C-, and L- bands. Experimental results also show IL < 1.6 dB and PER > 20 dB from 1265 nm to 1360 nm corresponding to the O-band, and from 1500 nm to 1617 nm that corresponds to the C-band. The device is a single-etched design on the standard 220 nm silicon-on-insulator (SOI) with silicon oxide cladding. Such a simple and compatible design paves the way for developing practical multi-band silicon photonic integrated circuits.
我们提出了一种用于多波段横向磁模（TM模）偏振器的全硅设计方案。该器件基于一维光栅，其工作模式取决于偏振状态。通过采用渐变结构，研究发现对于横向电（TE）模，可通过复用O波段的衍射以及S、C和L波段的反射来扩展工作带宽。通过模拟，我们实现了一个带宽为343 nm的器件，其插入损耗（IL）< 0.4 dB，偏振消光比（PER）> 20 dB。其工作波长范围覆盖了常用的光通信波段，包括O、S、C和L波段。实验结果还表明，在对应于O波段的1265 nm至1360 nm以及对应于C波段的1500 nm至1617 nm范围内，插入损耗IL < 1.6 dB，偏振消光比PER > 20 dB。该器件是在具有氧化硅包层的标准220 nm绝缘体上硅（SOI）上进行单次蚀刻设计的。这种简单且兼容的设计为开发实用的多波段硅光子集成电路铺平了道路。
