Liao Siyuan, Sui Junyang, Zhang Haifeng
Opt Express. 2022 Sep 12;30(19):34172-34187. doi: 10.1364/OE.472336.
This article proposed a metastructure device that can realize polarization conversion (PC) and absorption function switching in the terahertz (THz) range based on the photoconductivity effect. The photoconductance is formed by exposing silicon to different intensities of light, then the PC and absorption function can be switched. At the same time, the absorption bandwidth is expanded by inserting air resonant cavities into the dielectric substrate, changing the thickness of the dielectric locally, and cutting rectangular slots at the metal bottom plate. When the device works as a polarization converter, linear-to-linear PC with a polarization conversion rate of over 90% at 0.96-1.47 THz can be achieved, and its relative bandwidth is 42%. And when the silicon conductivity is fixed at 3500 S/m through illuminating, the device switches to an ultra-broadband absorber with over 90% absorption at 0.75-1.73 THz and a relative bandwidth of 79%. The designed device can be applied efficiently in many fields, such as electromagnetic cloaking and communication.
本文提出了一种基于光电导效应,能在太赫兹(THz)频段实现偏振转换(PC)和吸收功能切换的超结构器件。通过将硅暴露于不同强度的光来形成光电导,进而实现PC和吸收功能的切换。同时,通过在介质基板中插入空气谐振腔、局部改变介质厚度以及在金属底板上切割矩形槽来扩展吸收带宽。当该器件用作偏振转换器时,在0.96 - 1.47 THz频段可实现偏振转换率超过90%的线性到线性PC,其相对带宽为42%。并且当通过光照将硅的电导率固定在3500 S/m时,该器件切换为超宽带吸收器,在0.75 - 1.73 THz频段吸收率超过90%,相对带宽为79%。所设计的器件可有效应用于电磁隐身和通信等诸多领域。