Automatic design of an extreme ultraviolet lithography objective system based on the Seidel aberration theory.

In this paper, a method is proposed to solve the initial optical structure of an off-axis multimirror system for an extreme ultraviolet lithography (EUVL) application. By tracing the characteristic rays, the primary aberration can be expressed as a function of the distance and curvature based on the Seidel aberration theory. The initial structure with a favorable aberration performance is calculated when the function value is 0. We solve two different initial structures with an off-axis, six-mirror configuration with different optical powers. The NA of the finally optimized optical system is 0.25, the wavefront aberration rms value is less than 0.04, and the absolute distortion is below 1.2 nm.