• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

考虑光学邻近校正的聚焦贯穿式极紫外多层膜缺陷补偿

Through-focus EUV multilayer defect compensation considering optical proximity correction.

作者信息

Cheng Wei, Li Sikun, Wang Xiangzhao, Zhang Zinan

出版信息

Appl Opt. 2022 May 20;61(15):4437-4448. doi: 10.1364/AO.458059.

DOI:10.1364/AO.458059
PMID:36256282
Abstract

Extreme ultraviolet (EUV) multilayer defects result in the degradation of through-focus imaging quality. The optical proximity effect is another crucial factor that degrades the imaging quality. Both the impacts of the defects and the optical proximity effects could be mitigated by modifying the original mask patterns. A heuristic-based defect compensation method considering optical proximity correction and through-focus optimization is proposed in this paper. The edge of the mask pattern and the insertion of sub-resolution assist features (SRAFs) are optimized by covariance matrix adaptation evolution strategy (CMA-ES) to compensate for the degradation of the imaging quality with a certain defocus range. New encoding strategies for the edge pixels of the mask pattern and the SRAFs are proposed and utilized in this paper to ensure the manufacturability of the mask and the efficiency of the optimization at the same time. The rigorous database approach based on the scattering matrix is adopted to simulate the mask diffraction spectrum efficiently. Simulations verify that the through-focus imaging quality of both the defective masks with bump defects and pit defects could be obviously improved by the proposed defect compensation method.

摘要

极紫外(EUV)多层膜缺陷会导致全聚焦成像质量下降。光学邻近效应是另一个降低成像质量的关键因素。通过修改原始掩模图案,可以减轻缺陷和光学邻近效应的影响。本文提出了一种基于启发式的缺陷补偿方法,该方法考虑了光学邻近校正和全聚焦优化。通过协方差矩阵自适应进化策略(CMA-ES)对掩模图案的边缘和亚分辨率辅助特征(SRAF)的插入进行优化,以补偿在一定离焦范围内成像质量的下降。本文提出并采用了掩模图案边缘像素和SRAF的新编码策略,以同时确保掩模的可制造性和优化效率。采用基于散射矩阵的严格数据库方法来高效模拟掩模衍射光谱。仿真验证了所提出的缺陷补偿方法可以显著提高具有凸点缺陷和凹坑缺陷的缺陷掩模的全聚焦成像质量。

相似文献

1
Through-focus EUV multilayer defect compensation considering optical proximity correction.考虑光学邻近校正的聚焦贯穿式极紫外多层膜缺陷补偿
Appl Opt. 2022 May 20;61(15):4437-4448. doi: 10.1364/AO.458059.
2
Compensation of EUV lithography mask blank defect based on an advanced genetic algorithm.基于先进遗传算法的极紫外光刻掩膜版空白缺陷补偿
Opt Express. 2021 Aug 30;29(18):28872-28885. doi: 10.1364/OE.434787.
3
Extreme Ultraviolet Multilayer Defect Compensation in Computational Lithography.
J Nanosci Nanotechnol. 2016 May;16(5):5415-9. doi: 10.1166/jnn.2016.12254.
4
Fast heuristic-based source mask optimization for EUV lithography using dual edge evolution and partial sampling.基于快速启发式算法的极紫外光刻源掩模优化:采用双边演化和部分采样法
Opt Express. 2021 Jul 5;29(14):22778-22795. doi: 10.1364/OE.432010.
5
Linearized EUV mask optimization based on the adjoint method.基于伴随方法的线性化极紫外光刻掩膜优化
Opt Express. 2024 Feb 26;32(5):8415-8424. doi: 10.1364/OE.517783.
6
Gradient-based inverse extreme ultraviolet lithography.基于梯度的逆极紫外光刻技术。
Appl Opt. 2015 Aug 20;54(24):7284-300. doi: 10.1364/AO.54.007284.
7
Extreme ultraviolet phase defect characterization based on complex amplitudes of the aerial images.基于空间图像复振幅的极紫外相位缺陷表征
Appl Opt. 2021 Jun 10;60(17):5208-5219. doi: 10.1364/AO.425941.
8
Source mask optimization for extreme-ultraviolet lithography based on thick mask model and social learning particle swarm optimization algorithm.基于厚掩膜模型和社会学习粒子群优化算法的极紫外光刻源掩膜优化
Opt Express. 2021 Feb 15;29(4):5448-5465. doi: 10.1364/OE.418242.
9
Block-based mask optimization for optical lithography.用于光学光刻的基于块的掩模优化
Appl Opt. 2013 May 10;52(14):3351-63. doi: 10.1364/AO.52.003351.
10
Phase defect characterization using generative adversarial networks for extreme ultraviolet lithography.利用生成对抗网络对极紫外光刻的相缺陷进行特征描述。
Appl Opt. 2023 Feb 10;62(5):1243-1252. doi: 10.1364/AO.480356.