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在均质氧化物中编织横向变质晶界

Braiding Lateral Morphotropic Grain Boundaries in Homogenetic Oxides.

作者信息

Chen Shengru, Zhang Qinghua, Rong Dongke, Xu Yue, Zhang Jinfeng, Pei Fangfang, Bai He, Shang Yan-Xing, Lin Shan, Jin Qiao, Hong Haitao, Wang Can, Yan Wensheng, Guo Haizhong, Zhu Tao, Gu Lin, Gong Yu, Li Qian, Wang Lingfei, Liu Gang-Qin, Jin Kui-Juan, Guo Er-Jia

机构信息

Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.

Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.

出版信息

Adv Mater. 2023 Jan;35(2):e2206961. doi: 10.1002/adma.202206961. Epub 2022 Nov 21.

Abstract

Interfaces formed by correlated oxides offer a critical avenue for discovering emergent phenomena and quantum states. However, the fabrication of oxide interfaces with variable crystallographic orientations and strain states integrated along a film plane is extremely challenging by conventional layer-by-layer stacking or self-assembling. Here, the creation of morphotropic grain boundaries (GBs) in laterally interconnected cobaltite homostructures is reported. Single-crystalline substrates and suspended ultrathin freestanding membranes provide independent templates for coherent epitaxy and constraint on the growth orientation, resulting in seamless and atomically sharp GBs. Electronic states and magnetic behavior in hybrid structures are laterally modulated and isolated by GBs, enabling artificially engineered functionalities in the planar matrix. This work offers a simple and scalable method for fabricating unprecedented innovative interfaces through controlled synthesis routes as well as providing a platform for exploring potential applications in neuromorphics, solid-state batteries, and catalysis.

摘要

由相关氧化物形成的界面为发现新出现的现象和量子态提供了一条关键途径。然而,通过传统的逐层堆叠或自组装方法,在薄膜平面内集成具有可变晶体取向和应变状态的氧化物界面极具挑战性。在此,报道了在横向互连的钴酸盐同质结构中形成变质相界(GBs)。单晶衬底和悬浮的超薄独立膜为相干外延和生长取向约束提供了独立的模板,从而产生无缝且原子级尖锐的GBs。混合结构中的电子态和磁行为通过GBs进行横向调制和隔离,从而在平面基体中实现人工设计的功能。这项工作提供了一种简单且可扩展的方法,通过可控的合成路线制造前所未有的创新界面,并为探索神经形态学、固态电池和催化等潜在应用提供了一个平台。

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