Zhang Hewei, Tian Yang, Li Qian, Ding Wenqiang, Yu Xuzhen, Lin Zebiao, Feng Xuyang, Zhao Yanli
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China.
Sensors (Basel). 2022 Oct 12;22(20):7724. doi: 10.3390/s22207724.
With the rapid development of photo-communication technologies, avalanche photodiode (APD) will play an increasingly important role in the future due to its high quantum efficiency, low power consumption, and small size. The monolithic integration of optical components and signal processing electronics on silicon substrate chips is crucial to driving cost reduction and performance improvement; thus, the technical research on InGaAs/Si APD is of great significance. This work is the first to demonstrate the use of a photon-trapping (PT) structure to improve the performance of the InGaAs/Si APD based on an SOI substrate, which exhibits very high absorption efficiency at 1310 nm wavelength while the thickness of the absorption layer is kept at 800 nm. Based on the optical and electrical simulations, an optimized InGaAs/Si PT-APD is proposed, which exhibits a better performance and a higher responsivity compared to the original InGaAs/Si APD.
随着光通信技术的快速发展，雪崩光电二极管（APD）因其高量子效率、低功耗和小尺寸，在未来将发挥越来越重要的作用。在硅基芯片上实现光学元件与信号处理电子器件的单片集成对于降低成本和提高性能至关重要；因此，对InGaAs/Si APD的技术研究具有重要意义。这项工作首次展示了利用光子捕获（PT）结构来提高基于SOI衬底的InGaAs/Si APD的性能，该结构在吸收层厚度保持为800nm时，在1310nm波长处表现出非常高的吸收效率。基于光学和电学模拟，提出了一种优化的InGaAs/Si PT-APD，与原始的InGaAs/Si APD相比，它表现出更好的性能和更高的响应度。
