State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, P. R. China.
Hefei National Laboratory for Physical Sciences at Microscale, CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, School of Chemistry and Materials Science, University of Science and Technology of China, Hefei, 230026, P. R. China.
Small. 2022 Dec;18(49):e2205097. doi: 10.1002/smll.202205097. Epub 2022 Oct 30.
Organic-inorganic halide perovskite solar cells (PSCs) have attracted tremendous attention in the photovoltaic field due to their excellent optical properties and simple fabrication process. However, the recombination of photogenerated electron-hole pairs at the interface severely affects the power conversion efficiency (PCE) of the PSCs. Herein, a monolayer of inverse opal SnO (IO-SnO ) is synthesized via a template-assisted method and used as a scaffold for perovskite layer (PSK). The porous IO-SnO scaffold increases the contact area and shortens the transport distance between the electron transport layer (ETL) and PSK. Ultraviolet photoelectron spectroscopy and Kelvin probe force microscopy results indicate that the built-in electric field is enhanced with IO-SnO scaffold, strengthening the driving force for charge separation. Femtosecond transient absorption spectroscopy measurements reveal that the IO-SnO scaffold facilitates interfacial electron transfer from PSK to ETL. Based on the above superiorities, the IO-SnO -based PSCs exhibit boosted PCE and device stability compared with the pristine PSCs. This work provides insights into the development of novel scaffold layers for high-performance PSCs.
有机-无机卤化物钙钛矿太阳能电池（PSCs）由于其优异的光学性能和简单的制造工艺，在光伏领域引起了极大的关注。然而，光生电子-空穴对在界面处的复合严重影响了 PSCs 的功率转换效率（PCE）。在此，通过模板辅助法合成了单层反蛋白石 SnO（IO-SnO），并将其用作钙钛矿层（PSK）的支架。多孔 IO-SnO 支架增加了电子传输层（ETL）和 PSK 之间的接触面积并缩短了传输距离。紫外光电子能谱和 Kelvin 探针力显微镜结果表明，构建的内电场随着 IO-SnO 支架的增强而增强，从而增强了电荷分离的驱动力。飞秒瞬态吸收光谱测量表明，IO-SnO 支架有利于 PSK 到 ETL 的界面电子转移。基于上述优势，与原始 PSCs 相比，基于 IO-SnO 的 PSCs 表现出更高的 PCE 和器件稳定性。这项工作为高性能 PSCs 新型支架层的开发提供了思路。
