Trivedi Vikrant, Tiadi Minati, Murty Budaraju Srinivasa, Satapathy Dillip K, Battabyal Manjusha, Gopalan Raghavan
International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), IIT M Research Park, Chennai-600113, India.
Department of Metallurgical and Materials Engineering, Indian Institute of Technology Madras, Chennai-600036, India.
ACS Appl Mater Interfaces. 2022 Nov 16;14(45):51084-51095. doi: 10.1021/acsami.2c13747. Epub 2022 Oct 31.
The advantage of secondary-phase induced carrier filtering on the thermoelectric properties has paved the way for developing cost-effective, highly efficient thermoelectric materials. Here, we report a very high thermoelectric figure-of-merit of skutterudite nanocomposites achieved by tailoring interface carrier filtering. The single-filled skutterudite nanocomposites are prepared by dispersing rare-earth oxides nanoparticles (YbO, SmO, LaO) in the skutterudite (DyCoNiSb) matrix. The nanoparticles/skutterudite interfaces act as efficient carrier filters, thereby significantly enhancing the Seebeck coefficient without compromising the electrical conductivity. As a result, the highest power factor of ∼6.5 W/mK is achieved in the skutterudite nanocomposites. The nonuniform strain distribution near the nanoparticles due to the local lattice misfit and concentration fluctuations affect the heat carriers and thereby reduce the lattice thermal conductivity. Moreover, the three-dimensional atom probe analysis reveals the formation of Ni-rich grain boundaries in the skutterudite matrix, which also facilitates the reduction of lattice thermal conductivity. Both the factors, i.e., the reduction in lattice thermal conductivity and the enhancement of the power factor, lead to an enormous increase in ZT up to ∼1.84 at 723 K and an average ZT of about 1.56 in the temperature range from 523 to 723 K, the highest among the single-filled skutterudites reported so far.
第二相诱导载流子过滤对热电性能的优势为开发具有成本效益的高效热电材料铺平了道路。在此,我们报道了通过定制界面载流子过滤实现的方钴矿纳米复合材料非常高的热电优值。单填充方钴矿纳米复合材料是通过将稀土氧化物纳米颗粒(YbO、SmO、LaO)分散在方钴矿(DyCoNiSb)基体中制备的。纳米颗粒/方钴矿界面充当高效的载流子过滤器,从而在不影响电导率的情况下显著提高塞贝克系数。结果,方钴矿纳米复合材料实现了约6.5 W/mK的最高功率因子。由于局部晶格失配和浓度波动导致纳米颗粒附近的应变分布不均匀,影响了热载流子,从而降低了晶格热导率。此外,三维原子探针分析揭示了方钴矿基体中富镍晶界的形成,这也有助于降低晶格热导率。晶格热导率的降低和功率因子的提高这两个因素导致ZT在723 K时大幅提高至约1.84,在523至723 K的温度范围内平均ZT约为1.56,这是迄今为止报道的单填充方钴矿中最高的。