Yang Ruizhe, He Zihao, Lin Shiquan, Dou Wenjie, Wang Zhong Lin, Wang Haiyan, Liu Jun
Department of Mechanical and Aerospace Engineering, University at Buffalo, The State University of New York, Buffalo, New York14260, United States.
School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907-2045, United States.
Nano Lett. 2022 Nov 23;22(22):9084-9091. doi: 10.1021/acs.nanolett.2c03481. Epub 2022 Nov 7.
Tribovoltaic direct-current (DC) nanogenerator made of dynamic semiconductor heterojunction is emerging as a promising mechanical energy harvesting technology. However, fundamental understanding of the mechano-electronic carrier excitation and transport at dynamic semiconductor interfaces remains to be investigated. Here, we demonstrated for the first time, that tribovoltaic DC effect can be tuned with metalinsulator transition (MIT). In a representative MIT material (vanadium dioxide, VO), we found that the short-circuit current () can be enhanced by >20 times when the material is transformed from insulating to metallic state upon static or dynamic heating, while the open-circuit voltage () turns out to be unaffected. Such phenomenon may be understood by the Hubbard model for Mott insulator: orders' magnitude increase in conductivity is induced when the nearest hopping changes dramatically and overcomes the Coulomb repulsion, while the Coulomb repulsion giving rise to the quasi-particle excitation energy remains relatively stable.
由动态半导体异质结制成的摩擦光伏直流(DC)纳米发电机正成为一种很有前景的机械能收集技术。然而,对于动态半导体界面处的机电载流子激发和传输的基本理解仍有待研究。在此,我们首次证明摩擦光伏直流效应可以通过金属-绝缘体转变(MIT)来调节。在一种典型的MIT材料(二氧化钒,VO₂)中,我们发现当材料在静态或动态加热下从绝缘态转变为金属态时,短路电流(Isc)可增强20倍以上,而开路电压(Voc)则不受影响。这种现象可以用莫特绝缘体的哈伯德模型来解释:当最近邻跳跃急剧变化并克服库仑排斥时,电导率会有几个数量级的增加,而产生准粒子激发能的库仑排斥则保持相对稳定。