Suppr超能文献

倾斜磁场下分数量子霍尔效应的尺寸依赖性和诱导转变

Size dependence- and induced transformations- of fractional quantum Hall effects under tilted magnetic fields.

作者信息

Wijewardena U Kushan, Nanayakkara Tharanga R, Kriisa Annika, Reichl Christian, Wegscheider Werner, Mani Ramesh G

机构信息

Georgia State University, Atlanta, GA, 30303, USA.

ETH-Zurich, 8093, Zurich, Switzerland.

出版信息

Sci Rep. 2022 Nov 10;12(1):19204. doi: 10.1038/s41598-022-22812-x.

Abstract

Two-dimensional electron systems subjected to high transverse magnetic fields can exhibit Fractional Quantum Hall Effects (FQHE). In the GaAs/AlGaAs 2D electron system, a double degeneracy of Landau levels due to electron-spin, is removed by a small Zeeman spin splitting, [Formula: see text], comparable to the correlation energy. Then, a change of the Zeeman splitting relative to the correlation energy can lead to a re-ordering between spin polarized, partially polarized, and unpolarized many body ground states at a constant filling factor. We show here that tuning the spin energy can produce fractionally quantized Hall effect transitions that include both a change in [Formula: see text] for the [Formula: see text] minimum, e.g., from [Formula: see text] to [Formula: see text], and a corresponding change in the [Formula: see text], e.g., from [Formula: see text] to [Formula: see text], with increasing tilt angle. Further, we exhibit a striking size dependence in the tilt angle interval for the vanishing of the [Formula: see text] and [Formula: see text] resistance minima, including "avoided crossing" type lineshape characteristics, and observable shifts of [Formula: see text] at the [Formula: see text] minima- the latter occurring for [Formula: see text] and the 10/7. The results demonstrate both size dependence and the possibility, not just of competition between different spin polarized states at the same [Formula: see text] and [Formula: see text], but also the tilt- or Zeeman-energy-dependent- crossover between distinct FQHE associated with different Hall resistances.

摘要

处于高横向磁场中的二维电子系统可表现出分数量子霍尔效应(FQHE)。在砷化镓/铝镓砷二维电子系统中,由于电子自旋导致的朗道能级双重简并,会被一个小的塞曼自旋分裂消除,该分裂[公式:见正文]与关联能相当。然后,相对于关联能的塞曼分裂变化可导致在恒定填充因子下,自旋极化、部分极化和非极化多体基态之间的重新排序。我们在此表明,调节自旋能量可产生分数化量子化霍尔效应跃迁,这包括对于[公式:见正文]最小值的[公式:见正文]变化,例如从[公式:见正文]到[公式:见正文],以及在[公式:见正文]中的相应变化,例如从[公式:见正文]到[公式:见正文],随着倾斜角增加。此外,我们展示了在倾斜角区间内,对于[公式:见正文]和[公式:见正文]电阻最小值消失的显著尺寸依赖性,包括“避免交叉”型线形特征,以及在[公式:见正文]最小值处[公式:见正文]的可观测位移——后者发生在[公式:见正文]和10/7时。结果表明了尺寸依赖性以及可能性,不仅在相同的[公式:见正文]和[公式:见正文]下不同自旋极化态之间存在竞争,而且在与不同霍尔电阻相关的不同FQHE之间存在倾斜或塞曼能量依赖的交叉。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/244a/9649807/9d4650d0cfe0/41598_2022_22812_Fig1_HTML.jpg

文献AI研究员

20分钟写一篇综述,助力文献阅读效率提升50倍。

立即体验

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

马上搜索

文档翻译

学术文献翻译模型,支持多种主流文档格式。

立即体验