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分数量子反常霍尔效应的观测。

Observation of fractionally quantized anomalous Hall effect.

机构信息

Department of Physics, University of Washington, Seattle, WA, USA.

Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA.

出版信息

Nature. 2023 Oct;622(7981):74-79. doi: 10.1038/s41586-023-06536-0. Epub 2023 Aug 17.

Abstract

The integer quantum anomalous Hall (QAH) effect is a lattice analogue of the quantum Hall effect at zero magnetic field. This phenomenon occurs in systems with topologically non-trivial bands and spontaneous time-reversal symmetry breaking. Discovery of its fractional counterpart in the presence of strong electron correlations, that is, the fractional QAH effect, would open a new chapter in condensed matter physics. Here we report the direct observation of both integer and fractional QAH effects in electrical measurements on twisted bilayer MoTe. At zero magnetic field, near filling factor ν = -1 (one hole per moiré unit cell), we see an integer QAH plateau in the Hall resistance R quantized to h/e ± 0.1%, whereas the longitudinal resistance R vanishes. Remarkably, at ν  =  -2/3 and -3/5, we see plateau features in R at [Formula: see text] and [Formula: see text], respectively, whereas R remains small. All features shift linearly versus applied magnetic field with slopes matching the corresponding Chern numbers -1, -2/3 and -3/5, precisely as expected for integer and fractional QAH states. Additionally, at zero magnetic field, R is approximately 2h/e near half-filling (ν  = -1/2) and varies linearly as ν  is tuned. This behaviour resembles that of the composite Fermi liquid in the half-filled lowest Landau level of a two-dimensional electron gas at high magnetic field. Direct observation of the fractional QAH and associated effects enables research in charge fractionalization and anyonic statistics at zero magnetic field.

摘要

整数量子反常霍尔(QAH)效应是零磁场下量子霍尔效应的晶格类似物。这种现象发生在拓扑非平凡能带和自发时间反转对称性破缺的系统中。在强电子相关存在的情况下,其分数对应物,即分数 QAH 效应的发现,将为凝聚态物理开辟一个新的篇章。在这里,我们在扭曲双层 MoTe 的电测量中直接观察到整数和分数 QAH 效应。在零磁场下,近填充因子 ν = -1(每个莫尔单元的一个空穴),我们在霍尔电阻 R 中看到整数 QAH 平台,其量子化为 h/e ± 0.1%,而纵向电阻 R 则为零。值得注意的是,在 ν  =  -2/3 和 -3/5 时,我们分别在 R 中看到 [Formula: see text] 和 [Formula: see text] 的平台特征,而 R 仍然很小。所有特征都与施加的磁场呈线性关系,斜率与相应的 Chern 数 -1、-2/3 和 -3/5 匹配,这与整数和分数 QAH 态的预期完全一致。此外,在零磁场下,当 ν 被调谐时,R 在半填充(ν  = -1/2)附近约为 2h/e,并呈线性变化。这种行为类似于二维电子气体在高磁场下最低 Landau 能级中填充一半时的复合费米液体。分数 QAH 和相关效应的直接观察使我们能够在零磁场下研究电荷分数化和任意子统计。

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