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用于车辆到电网的创新型双向隔离高功率密度车载充电器

Innovative Bidirectional Isolated High-Power Density On-Board Charge for Vehicle-to-Grid.

作者信息

Hrbac Roman, Hrdina Libor, Kolar Vaclav, Slanina Zdenek, Blazek Vojtech, Vantuch Tomas, Bartłomiejczyk Mikołaj, Misak Stanislav

机构信息

Faculty of Electric Engineering and Computer Science, VSB-Technical University of Ostrava, 17. Listopadu 2172/15, 708 00 Ostrava, Czech Republic.

ENET Centre, VSB-Technical University of Ostrava, 17. Listopadu 2172/15, 708 00 Ostrava, Czech Republic.

出版信息

Sensors (Basel). 2022 Nov 3;22(21):8473. doi: 10.3390/s22218473.

Abstract

This paper deals with developing and implementing a bidirectional galvanically isolated on-board charger of a high-power density. The power density of the new charger was 4 kW/kg and 2.46 kW/dm, and the maximum efficiency was 96.4% at 3.4 kW. Due to the requirement to achieve a high-power density, a single-stage inverter topology was used. Regarding switching losses, due to the topology of the circuit with so-called hard switching, the switching frequency was set to 150 kHz. A laboratory prototype was built to verify the properties and operating principles of the described charger topology. The on-board charger has been tested in a microgrid test platform. Due to the parasitic properties of the transformer and other electronic components, overvoltage with subsequent oscillations occurred on the primary side of the transformer and damped resonance on its secondary side. These parasitic properties caused interference and especially voltage stress on the semiconductor elements. These undesirable phenomena have been eliminated by adding an active element to the charger topology and a new transistor control strategy. This new switching control strategy of transistors has been patented.

摘要

本文致力于开发和实现一种高功率密度的双向 galvanically 隔离车载充电器。新型充电器的功率密度为 4kW/kg 和 2.46kW/dm,在 3.4kW 时最大效率为 96.4%。由于需要实现高功率密度,采用了单级逆变器拓扑结构。关于开关损耗,由于具有所谓硬开关的电路拓扑结构,开关频率设定为 150kHz。构建了一个实验室原型来验证所描述的充电器拓扑结构的特性和工作原理。该车载充电器已在微电网测试平台上进行了测试。由于变压器和其他电子元件的寄生特性,在变压器的初级侧出现了过电压及随后的振荡,在其次级侧出现了阻尼共振。这些寄生特性对半导体元件造成了干扰,尤其是电压应力。通过在充电器拓扑结构中添加一个有源元件和一种新的晶体管控制策略,消除了这些不良现象。这种新的晶体管开关控制策略已获得专利。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d403/9656784/ab949a5c7573/sensors-22-08473-g001.jpg

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