金属氮化物气相外延法制备AlN单晶薄膜中缺陷的影响

Impact of Defects for AlN Single Crystal Thin Film by Metal Nitride Vapor Phase Epitaxy.

作者信息

Xie Luxiao, Zhang Hui, Xie Xinjian, Wang Endong, Lin Xiangyu, Song Yuxuan, Liu Guodong, Chen Guifeng

机构信息

School of Materials Science and Engineering, Hebei University of Technology, Tianjin300132, China.

Hebei Engineering Laboratory of Photoelectronic Functional Crystals, Hebei University of Technology, Tianjin300130, China.

出版信息

ACS Omega. 2022 Nov 3;7(45):41100-41106. doi: 10.1021/acsomega.2c04626. eCollection 2022 Nov 15.

DOI:10.1021/acsomega.2c04626

PMID:36406487

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9670715/

Abstract

Herein, the defect-related properties of an AlN sample prepared based on the optimal process parameters by metal nitride vapor phase epitaxy (MNVPE) were investigated. The FWHM values of the (0002)/(101̅2) planes of the sample by MNVPE are 397/422 arcsec; the advantages of similar FWHM values of (0002) and (101̅2) planes will have a huge advantage over other preparation methods such as MOCVD. From the cross-sectional TEM images of the AlN sample, it is found that the fusion of a large number of a + c type dislocations occur at the interface of the low temperature buffer layer and the epitaxial layer, which affects the growth mode of the epitaxial layer. The lower FHWM value of the (high) peak of the Raman spectrum, the lower the point defect concentration, which made the sample gain higher energy defect emission bands in the PL spectra and higher transmittance in the UV-vis transmission spectrum.

摘要

在此，研究了通过金属氮化物气相外延（MNVPE）基于最佳工艺参数制备的AlN样品的缺陷相关特性。通过MNVPE制备的样品的（0002）/（101̅2）平面的半高宽（FWHM）值为397/422弧秒；（0002）和（101̅2）平面具有相似FWHM值的优势相对于其他制备方法（如金属有机化学气相沉积（MOCVD））将具有巨大优势。从AlN样品的横截面透射电子显微镜图像中发现，大量a + c型位错在低温缓冲层和外延层的界面处发生融合，这影响了外延层的生长模式。拉曼光谱（高）峰的较低半高宽值，点缺陷浓度越低，这使得样品在光致发光（PL）光谱中获得更高的能量缺陷发射带，并且在紫外-可见透射光谱中具有更高的透射率。