Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johoku, Naka-Ku, Hamamatsu, Shizuoka 432-8011, Japan; Functional Materials and Energy Devices Laboratory, Department of Physics Nanotechnology, SRM Institute of Science and Technology, Kattankulathur, Chennai 603203, Tamil Nadu, India.
Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johoku, Naka-Ku, Hamamatsu, Shizuoka 432-8011, Japan; Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-Ku, Hamamatsu, Shizuoka 432-8011, Japan.
J Colloid Interface Sci. 2023 Mar;633:120-131. doi: 10.1016/j.jcis.2022.10.147. Epub 2022 Nov 2.
The design and construction of state-of-the-art wearable thermoelectric materials are important for the development of self-powered wearable thermoelectric generators (WTEGs). Molybdenum disulfide (MoS) has been reported as a noteworthy thermoelectric (TE) material because of its large intrinsic bandgap and high carrier mobility. In this work, Cu-doped two-dimensional layered MoS nanosheets were grown on carbon fabric (CF) via a hydrothermal method. The electrical conductivity, Seebeck coefficient, and power factor for the Cu-doped MoS were found to increase with increasing temperature. The maximum Seebeck coefficient was obtained for a MoS sample doped with 4 at% of Cu (CM4) was ∼10 μV/K at 303 K and ∼13 μV/K at 373 K. The enhancement in the Seebeck coefficient was attributed to an energy-filtering effect caused by the interfacial barrier between MoS and Cu. In addition, a thermoelectric device was designed with four pairs of TE materials, where CM4 (4 at%) was used as a p-type material and Cu wire was used as an n-type material. These p- and n-type materials were connected electrically in series and thermally in parallel to generate a voltage of 190.7 μV at a temperature gradient of 8 K.
先进的可穿戴式热电材料的设计和构建对于自供电可穿戴式热电发电机 (WTEG) 的发展非常重要。二硫化钼 (MoS) 因其较大的本征能隙和较高的载流子迁移率而被报道为一种很有前途的热电 (TE) 材料。在这项工作中,通过水热法在碳纤维 (CF) 上生长了掺铜的二维层状 MoS 纳米片。研究发现,掺铜的 MoS 的电导率、塞贝克系数和功率因子随温度升高而增加。在掺铜 4 原子百分比 (CM4) 的 MoS 样品中,最大的塞贝克系数约为 10 μV/K (303 K) 和 13 μV/K (373 K)。塞贝克系数的增强归因于 MoS 和 Cu 之间的界面势垒引起的能带过滤效应。此外,设计了一个由四对 TE 材料组成的热电装置,其中 CM4 (4 原子百分比) 用作 p 型材料,Cu 线用作 n 型材料。这些 p 型和 n 型材料在电学上串联,在热学上并联,在 8 K 的温度梯度下产生 190.7 μV 的电压。