Gholipoor Mohammad, Solhtalab Nasrin, Mohammadi Mohammad Hosein
Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, Republic of Korea.
Department of Electrical and Computer Engineering, Tarbiat Modares University (TMU), Tehran, Iran.
Sci Rep. 2022 Nov 28;12(1):20455. doi: 10.1038/s41598-022-25015-6.
Recently, the impressive achievements accomplished in multijunction (tandem) perovskite solar cells have triggered a huge research effort to boost their performance. Here, using a three-dimensional (3D) finite element method (FEM) technique, we propose and investigate a parallel tandem PSCs consisting of two absorbing layers of MoTe and CHNHPbI with cascaded bandgaps to more efficiently use the near-infrared (NIR) solar spectrum. Endowed with a bandgap of about 1 eV, the MoTe layer in conjunction with a CHNHPbI layer is able to broaden the light absorption range of structure beyond the wavelength of 800 nm, up to 1200 nm. In addition to this, the MoTe material can not only appreciably harvest light even with a thickness as low as 20 nm due to their high absorption coefficient, but also make a perfect band alignment with the CHNHPbI layer. As a result, the proposed multijunction PCS yields a high power conversion efficiency (PCE) of 18.52% with a V of 0.83 V, J of 26.25 mA/cm, and FF of 0.84, which is considerably greater than its corresponding single-junction PSCs with PCE, V, J, and FF of, 14.01%, 1.14 V, 15.20 mA/cm, and 0.81, respectively. Furthermore, to mitigate the V loss caused by the low bandgap of MoTe, we demonstrate an increase in V from 0.84 to 0.928 V and in PCE from 18.52% to 20.32%, when we replace a reduced graphene oxide (rGO) layer with Spiro-OMeTAD layer as a hole transport layer (HTL).
最近,多结(串联)钙钛矿太阳能电池取得的令人瞩目的成就引发了巨大的研究努力,以提高其性能。在此,我们使用三维(3D)有限元方法(FEM)技术,提出并研究了一种由MoTe和CHNHPbI两个吸收层组成的并联串联PSC,其具有级联带隙,以便更有效地利用近红外(NIR)太阳光谱。MoTe层的带隙约为1 eV,与CHNHPbI层结合能够将结构的光吸收范围拓宽到800 nm以上,直至1200 nm。除此之外,MoTe材料不仅由于其高吸收系数即使厚度低至20 nm也能显著吸收光,而且还能与CHNHPbI层实现完美的能带对齐。结果,所提出的多结PCS的功率转换效率(PCE)高达18.52%,V为0.83 V,J为26.25 mA/cm,填充因子(FF)为0.84,这大大高于其相应的单结PSC,后者的PCE、V、J和FF分别为14.01%、1.14 V、15.20 mA/cm和0.81。此外,为了减轻由MoTe的低带隙引起的V损失,我们证明当用Spiro-OMeTAD层代替还原氧化石墨烯(rGO)层作为空穴传输层(HTL)时,V从0.84增加到0.928 V,PCE从18.52%增加到20.32%。