Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB, 08193 Bellaterra, Barcelona, Spain.
Laboratoire de Chimie des Polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB), Boulevard du Triomphe, CP 206/01, 1050 Bruxelles, Belgium.
Nanoscale. 2022 Dec 22;15(1):230-236. doi: 10.1039/d2nr05625a.
The deposition of organic semiconductors (OSCs) using solution shearing deposition techniques is highly appealing for device implementation. However, when using high deposition speeds, it is necessary to use very concentrated OSC solutions. The OSCs based on the family of dinaphtho[2,3-:2',3'-]thieno[3,2-]thiophene (DNTT) have been shown to be excellent OSCs due to their high mobility and stability. However, their limited solubility hinders the processing of these materials at high speed. Here, we report the conditions to process alkylated DNTT and the S-shaped π-core derivative S-DNTT by bar-assisted meniscus shearing (BAMS) at high speed (, 10 mm s). In all the cases, homogeneous thin films were successfully prepared, although we found that the gain in solubility achieved with the S-DNTT derivative strongly facilitated solution processing, achieving a field-effect mobility of 2.1 cm V s, which is two orders of magnitude higher than the mobility found for the less soluble linear derivatives.
使用溶液剪切沉积技术沉积有机半导体（OSC）对于器件的实现非常有吸引力。然而，当使用高沉积速度时，必须使用非常高浓度的 OSC 溶液。基于二萘并[2,3-b:2',3'-]噻吩[3,2-b]噻吩（DNTT）家族的 OSCs 因其高迁移率和稳定性而被证明是优秀的 OSCs。然而，它们的有限溶解度阻碍了这些材料在高速下的加工。在这里，我们报告了通过棒辅助弯月面剪切（BAMS）在高速（10mm/s）下处理烷基化 DNTT 和 S 形π核衍生物 S-DNTT 的条件。在所有情况下，都成功地制备了均匀的薄膜，尽管我们发现 S-DNTT 衍生物所获得的溶解度的提高极大地促进了溶液处理，实现了 2.1cm^2/Vs 的场效应迁移率，比溶解度较低的线性衍生物的迁移率高两个数量级。
