Zhou Zhiwen, Wu Qisheng, Wang Sijia, Huang Yu-Ting, Guo Hua, Feng Shien-Ping, Chan Paddy Kwok Leung
Department of Mechanical Engineering The University of Hong Kong Pok Fu Lam Road Hong Kong.
Department of Chemistry and Chemical Biology University of New Mexico Albuquerque NM 87131 USA.
Adv Sci (Weinh). 2019 Aug 1;6(19):1900775. doi: 10.1002/advs.201900775. eCollection 2019 Oct 2.
Solution-processed 2D organic semiconductors (OSCs) have drawn considerable attention because of their novel applications from flexible optoelectronics to biosensors. However, obtaining well-oriented sheets of 2D organic materials with low defect density still poses a challenge. Here, a highly crystallized 2,9-didecyldinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (C-DNTT) monolayer crystal with large-area uniformity is obtained by an ultraslow shearing (USS) method and its growth pattern shows a kinetic Wulff's construction supported by theoretical calculations of surface energies. The resulting seamless and highly crystalline monolayers are then used as templates for thermally depositing another C-DNTT ultrathin top-up film. The organic thin films deposited by this hybrid approach show an interesting coherence structure with a copied molecular orientation of the templating crystal. The organic field-effect transistors developed by these hybrid C-DNTT films exhibit improved carrier mobility of 14.7 cm V s as compared with 7.3 cm V s achieved by pure thermal evaporation (100% improvement) and 2.8 cm V s achieved by solution sheared monolayer C-DNTT. This work establishes a simple yet effective approach for fabricating high-performance and low-cost electronics on a large scale.
溶液处理的二维有机半导体(OSCs)因其在从柔性光电子学到生物传感器等领域的新颖应用而备受关注。然而,获得具有低缺陷密度的取向良好的二维有机材料片层仍然是一个挑战。在此,通过超慢速剪切(USS)方法获得了具有大面积均匀性的高度结晶的2,9-二癸基二萘并[2,3-b:2',3'-f]噻吩并[3,2-b]噻吩(C-DNTT)单层晶体,其生长模式显示出一种动力学伍尔夫构造,这得到了表面能理论计算的支持。然后,将所得的无缝且高度结晶的单层用作模板,用于热沉积另一个C-DNTT超薄补充膜。通过这种混合方法沉积的有机薄膜呈现出一种有趣的相干结构,具有与模板晶体复制的分子取向。与通过纯热蒸发实现的7.3 cm² V⁻¹ s⁻¹(提高了100%)和通过溶液剪切单层C-DNTT实现的2.8 cm² V⁻¹ s⁻¹相比,由这些混合C-DNTT薄膜开发的有机场效应晶体管表现出改善的载流子迁移率,达到14.7 cm² V⁻¹ s⁻¹。这项工作建立了一种简单而有效的方法,可大规模制造高性能和低成本的电子产品。