Ma Can, Hou Jin, Yang Chunyong, Shi Ming, Chen Shaoping
Hubei Key Laboratory of Intelligent Wireless Communications, Hubei Engineering Research Center for Intelligent Internet of Things, College of Electronic and Information Engineering, South-Central MinZu University, Wuhan, 430074, China.
Front Optoelectron. 2022 May 6;15(1):20. doi: 10.1007/s12200-022-00023-6.
The slab effective index difference between the transverse-electric (TE) and transverse-magnetic (TM) polarizations was utilized to obtain complete photonic bandgap (CPBG) in a silicon nitride (SiN) photonic crystal slab. For this, coincident frequency range in the TE photonic bandgap (PBG) and TM PBG, which denotes the CPBGs of the slab, must be found with the same structure. Through adjusting the effective index pair of TE and TM polarizations by changing the thickness of the SiN core layer, and also optimizing the structure parameters within the photonic crystal plane, a large normalized CPBG of 5.62% was theoretically obtained in a slab of SiN with a refractive index of 2.5. Moreover, based on the obtained CPBG, a microcavity which could support both TE and TM polarization was theoretically demonstrated. The cavity modes for different polarizations were both well confined, which proved the reliability of the CPBG. In addition, using the same method, the lowest refractive index of SiN on silica slab for a CPBG could be extended to as low as 2. The results indicate that there is potential for development of various high-performance CPBG devices based on SiN slab technology.
利用横向电场（TE）和横向磁场（TM）偏振之间的平板有效折射率差，在氮化硅（SiN）光子晶体平板中获得完全光子带隙（CPBG）。为此，必须在相同结构下找到TE光子带隙（PBG）和TM PBG中的重合频率范围，该范围表示平板的CPBG。通过改变SiN芯层的厚度来调整TE和TM偏振的有效折射率对，并优化光子晶体内平面的结构参数，理论上在折射率为2.5的SiN平板中获得了5.62%的大归一化CPBG。此外，基于获得的CPBG，理论上证明了一个能够支持TE和TM偏振的微腔。不同偏振的腔模都被很好地限制，这证明了CPBG的可靠性。此外，使用相同的方法，用于CPBG的二氧化硅平板上SiN的最低折射率可以扩展到低至2。结果表明，基于SiN平板技术开发各种高性能CPBG器件具有发展潜力。
