State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Sci Bull (Beijing). 2023 Jan 30;68(2):173-179. doi: 10.1016/j.scib.2023.01.013. Epub 2023 Jan 10.
Polarization-sensitive photodetectors, with the ability of identifying the texture-, stress-, and roughness-induced light polarization state variation, displace unique advantages in the fields of national security, medical diagnosis, and aerospace. The utilization of in-plane anisotropic two-dimensional (2D) materials has led the polarization photodetector into a polarizer-free regime, and facilitated the miniaturization of optoelectronic device integration. However, the insufficient polarization ratio (usually less than 10) restricts the detection resolution of polarized signals. Here, we designed a sub-wavelength array (SWA) structure of 2D germanium selenium (GeSe) to further improve its anisotropic sensitivity, which boosts the polarized photocurrent ratio from 1.6 to 18. This enhancement comes from the combination of nano-scale arrays with atomic-scale lattice arrangement at the low-symmetric direction, while the polarization-sensitive photoresponse along the high-symmetric direction is strongly suppressed due to the SWA-caused depolarization effect. Our mechanism study revealed that the SWA can improve the asymmetry of charge distribution, attenuate the matrix element in zigzag direction, and the localized surface plasma, which elevates the photo absorption and photoelectric transition probability along the armchair direction, therefore accounts for the enhanced polarization sensitivity. In addition, the photodetector based on GeSe SWA exhibited a broad power range of 40 dB at a near-infrared wavelength of 808 nm and the ability of weak-light detection under 0.1 LUX of white light (two orders of magnitude smaller than pristine 2D GeSe). This work provides a feasible guideline to improve the polarization sensitivity of 2D materials, and will greatly benefit the development of polarized imaging sensors.
偏振敏感光电探测器能够识别纹理、应力和粗糙度引起的光偏振态变化,在国家安全、医疗诊断和航空航天等领域具有独特的优势。平面各向异性二维(2D)材料的应用使偏振光电探测器进入无偏光器的领域,并促进了光电设备集成的小型化。然而,其偏振比(通常小于 10)不足限制了对偏振信号的检测分辨率。在这里,我们设计了一种二维锗硒(GeSe)的亚波长阵列(SWA)结构,以进一步提高其各向异性灵敏度,将偏振光电流比从 1.6 提高到 18。这种增强来自纳米级阵列与沿低对称方向的原子级晶格排列的结合,而沿高对称方向的偏振光响应由于 SWA 引起的去极化效应而受到强烈抑制。我们的机制研究表明,SWA 可以改善电荷分布的不对称性,削弱锯齿方向的矩阵元素和局域表面等离子体,从而提高沿扶手椅方向的光吸收和光电跃迁概率,因此可以提高偏振灵敏度。此外,基于 GeSe SWA 的光电探测器在近红外 808nm 波长下具有 40dB 的宽功率范围,并且能够在 0.1lux 的白光下进行弱光检测(比原始二维 GeSe 小两个数量级)。这项工作为提高二维材料的偏振灵敏度提供了一种可行的指导,将极大地促进偏振成像传感器的发展。