Wei Xinjian, Li Hao-Bo, Zhang Qinghua, Li Dong, Qin Mingyang, Xu Li, Hu Wei, Huan Qing, Yu Li, Miao Jun, Yuan Jie, Zhu Beiyi, Kusmartseva Anna, Kusmartsev Feo V, Silhanek Alejandro V, Xiang Tao, Yu Weiqiang, Lin Yuan, Gu Lin, Yu Pu, Chen Qihong, Jin Kui
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China.
State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China.
Sci Bull (Beijing). 2020 Oct 15;65(19):1607-1613. doi: 10.1016/j.scib.2020.05.013. Epub 2020 May 19.
Manipulating the superconducting states of high transition temperature (high-T) cuprate superconductors in an efficient and reliable way is of great importance for their applications in next-generation electronics. Here, employing ionic liquid gating, a selective control of volatile and non-volatile superconductivity is achieved in pristine insulating PrCuO (PCO) films, based on two distinct mechanisms. Firstly, with positive electric fields, the film can be reversibly switched between superconducting and non-superconducting states, attributed to the carrier doping effect. Secondly, the film becomes more resistive by applying negative bias voltage up to - 4 V, but strikingly, a non-volatile superconductivity is achieved once the gate voltage is removed. Such phenomenon represents a distinctive route of manipulating superconductivity in PCO, resulting from the doping healing of oxygen vacancies in copper-oxygen planes as unravelled by high-resolution scanning transmission electron microscope and in situ X-ray diffraction experiments. The effective manipulation of volatile/non-volatile superconductivity in the same parent cuprate brings more functionalities to superconducting electronics, as well as supplies flexible samples for investigating the nature of quantum phase transitions in high-T superconductors.
以高效且可靠的方式操纵高转变温度(高温)铜酸盐超导体的超导态对于其在下一代电子学中的应用至关重要。在此,利用离子液体门控技术,基于两种不同机制,在原始绝缘PrCuO(PCO)薄膜中实现了对挥发性和非挥发性超导性的选择性控制。首先,在正电场作用下,薄膜可在超导态和非超导态之间可逆切换,这归因于载流子掺杂效应。其次,施加高达 -4 V的负偏压时,薄膜电阻增大,但引人注目的是,一旦去除栅极电压,就会实现非挥发性超导。这种现象代表了一种在PCO中操纵超导性的独特途径,这是由高分辨率扫描透射电子显微镜和原位X射线衍射实验所揭示的铜氧平面中氧空位的掺杂愈合所导致的。在同一母体铜酸盐中有效操纵挥发性/非挥发性超导性为超导电子学带来了更多功能,同时也为研究高温超导体中量子相变的本质提供了灵活的样本。