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通过镁掺杂调节 FeSe 薄膜超导性。

Tuning Superconductivity in FeSe Thin Films via Magnesium Doping.

机构信息

Institute for Superconducting and Electronic Materials, AIIM, University of Wollongong , Squires Way, North Wollongong, New South Wales 2500, Australia.

Shanghai Key Laboratory of High Temperature Superconductors, Physics Department, Shanghai University , Shanghai 200444, People's Republic of China.

出版信息

ACS Appl Mater Interfaces. 2016 Mar;8(12):7891-6. doi: 10.1021/acsami.6b00574. Epub 2016 Mar 17.

Abstract

In contrast to its bulk crystal, the FeSe thin film or layer exhibits better superconductivity performance, which recently attracted much interest in its fundamental research as well as in potential applications around the world. In the present work, tuning superconductivity in FeSe thin films was achieved by magnesium-doping technique. Tc is significantly enhanced from 10.7 K in pure FeSe films to 13.4 K in optimized Mg-doped ones, which is approximately 1.5 times higher than that of bulk crystals. This is the first time achieving the enhancement of superconducting transition temperature in FeSe thin films with practical thickness (120 nm) via a simple Mg-doping process. Moreover, these Mg-doped FeSe films are quite stable in atmosphere with Hc2 up to 32.7 T and Tc(zero) up to 12 K, respectively, implying their outstanding potential for practical applications in high magnetic fields. It was found that Mg enters the matrix of FeSe lattice, and does not react with FeSe forming any other secondary phase. Actually, Mg first occupies Fe-vacancies, and then substitutes for some Fe in the FeSe crystal lattices when Fe-vacancies are fully filled. Simultaneously, external Mg-doping introduces sufficient electron doping and induces the variation of electron carrier concentration according to Hall coefficient measurements. This is responsible for the evolution of superconducting performance in FeSe thin films. Our results provide a new strategy to improve the superconductivity of 11 type Fe-based superconductors and will help us to understand the intrinsic mechanism of this unconventional superconducting system.

摘要

与体单晶相比,FeSe 薄膜或层表现出更好的超导性能,这在最近引起了全世界对其基础研究以及潜在应用的极大兴趣。在本工作中,通过镁掺杂技术调谐 FeSe 薄膜的超导性。在优化的 Mg 掺杂样品中,Tc 从纯 FeSe 薄膜的 10.7 K 显著提高到 13.4 K,约为体单晶的 1.5 倍。这是首次通过简单的 Mg 掺杂工艺实现具有实际厚度(120nm)的 FeSe 薄膜超导转变温度的提高。此外,这些 Mg 掺杂的 FeSe 薄膜在大气中非常稳定,Hc2 高达 32.7T,Tc(零)高达 12K,这意味着它们在高磁场中的实际应用具有巨大潜力。研究发现,Mg 进入 FeSe 晶格的基质中,并且不与 FeSe 反应形成任何其他次级相。实际上,Mg 首先占据 Fe 空位,然后在 Fe 空位完全填充时取代 FeSe 晶格中的一些 Fe。同时,外部 Mg 掺杂引入了足够的电子掺杂,并根据霍尔系数测量引起载流子浓度的变化。这是 FeSe 薄膜超导性能演变的原因。我们的结果为提高 11 型 Fe 基超导体的超导性提供了一种新策略,并将有助于我们理解这个非常规超导体系的内在机制。

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