增加在六方氮化硼上生长的单层石墨烯的覆盖率。

Increasing coverage of mono-layer graphene grown on hexagonal boron nitride.

机构信息

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China.

School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China.

出版信息

Nanotechnology. 2023 Feb 6;34(16). doi: 10.1088/1361-6528/acb4f5.

DOI:10.1088/1361-6528/acb4f5

PMID:36669199

Abstract

Graphene sitting on hexagonal boron nitride (-BN) always exhibits excellent electrical properties. And the properties of graphene on-BN are often dominated by its domain size and boundaries. Chemical vapor deposition (CVD) is a promising approach to achieve large size graphene crystal. However, the CVD growth of graphene on-BN still faces challenges in increasing coverage of monolayer graphene because of a weak control on nucleation and vertical growth. Here, an auxiliary source strategy is adapted to increase the nucleation density of graphene on-BN and synthesis continuous graphene films. It is found that both silicon carbide and organic polymer e.g. methyl methacrylate can assist the nucleation of graphene, and then increases the coverage of graphene on-BN. By optimizing the growth temperature, vertical accumulation of graphitic materials can be greatly suppressed. This work provides an effective approach for preparing continuous graphene film on-BN, and may bring a new sight for the growth of high quality graphene.

摘要

石墨烯在六方氮化硼（h-BN）上总是表现出优异的电学性能。而石墨烯在 h-BN 上的性能通常由其畴尺寸和边界主导。化学气相沉积（CVD）是实现大尺寸石墨烯晶体的一种很有前途的方法。然而，由于对成核和垂直生长的控制较弱，CVD 生长石墨烯在 h-BN 上仍然面临着增加单层石墨烯覆盖率的挑战。在这里，采用辅助源策略来增加石墨烯在 h-BN 上的成核密度并合成连续的石墨烯薄膜。结果发现，碳化硅和有机聚合物（如甲基丙烯酸甲酯）都可以辅助石墨烯的成核，从而提高石墨烯在 h-BN 上的覆盖率。通过优化生长温度，可以大大抑制石墨材料的垂直堆积。这项工作为在 h-BN 上制备连续石墨烯薄膜提供了一种有效的方法，可能为高质量石墨烯的生长带来新的思路。