Zhang Hao, Gao Haibo, Geng Junyuan, Meng Xianghe, Xie Hui
State Key Laboratory of Robotics and Systems, Harbin Institute of Technology, Harbin, 150080, China.
Small Methods. 2023 Mar;7(3):e2201342. doi: 10.1002/smtd.202201342. Epub 2023 Jan 22.
The piezoelectric properties of semiconductor micro/nanowires (M/NWs) are crucial for optimizing semiconductors' electronic structure and carrier dynamics. However, the dynamic characterization of the piezoelectric properties of M/NWs remains challenging. Here, a Kelvin probe force microscopy technique based on a dual-probe atomic force microscope is developed to achieve in situ piezoelectric potential measurements of dynamic bending MWs. This technique can not only characterize the surface potential on different crystal faces of ZnO MWs in a natural state through controllable axial rotation, but also investigate the piezoelectric potential of the dynamically bending flake-like ZnO MW at different points and under different strain loads. The results show that the surface potentials of different faces/positions of the ZnO MWs are varied significantly, and determine that the quasi-static conditions piezo-strain factor of the flake-like ZnO MW is 0.28 V/%, while the factor was 0.14 V/% under low-frequency (⩽5 Hz) sinusoidal strain loading. This work provides a significant methodology to further study piezoelectric materials, and it aims to facilitate their applications in piezoelectric devices and systems.
半导体微/纳米线（M/NWs）的压电特性对于优化半导体的电子结构和载流子动力学至关重要。然而，M/NWs压电特性的动态表征仍然具有挑战性。在此，基于双探针原子力显微镜开发了一种开尔文探针力显微镜技术，以实现对动态弯曲的微米线（MWs）的原位压电势测量。该技术不仅可以通过可控的轴向旋转来表征自然状态下ZnO微米线不同晶面上的表面电势，还可以研究动态弯曲的片状ZnO微米线在不同点和不同应变载荷下的压电势。结果表明，ZnO微米线不同面/位置的表面电势有显著变化，并确定片状ZnO微米线的准静态条件下压应变因子为0.28 V/%，而在低频（⩽5 Hz）正弦应变载荷下该因子为0.14 V/%。这项工作为进一步研究压电材料提供了重要方法，旨在促进其在压电器件和系统中的应用。
