Kurunthatil Kuttiat Thejas, Abraham Malini, Kunti Arup K, Amador-Mendez Nuño, Tchernycheva Maria, Das Subrata
Materials Science and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology, Thiruvananthapuram, Kerala695019, India.
Academy of Scientific and Innovative Research (AcSIR), Ghaziabad201002, India.
ACS Appl Mater Interfaces. 2023 Feb 8;15(5):7083-7101. doi: 10.1021/acsami.2c20066. Epub 2023 Jan 26.
Red emission from Mn-containing oxides inspired the development of high color rendering and cost-effective white-light-emitting diodes (WLEDs). Aiming at this fact, a series of new crystallographic site modified (Mg, Ba)MGeO: Mn (M = Al, Ga) compositions were developed with strong deep-red emission in the reaction to UV and blue lights. The MgAlGeO host is composed of three phases: orthorhombic-MgGaGeO, orthorhombic-MgGeO, and cubic-MgAlO. However, MgGaGeO secured an orthorhombic crystal structure. Interestingly, MgAlGeO: Mn showed a 13-fold more intense emission than MgGaGeO: Mn since Mn occupancy was preferable to [AlO] sites compared to [GaO]. The coexisting phases of MgAlO and MgGeO in MgAlGeO: Mn contributed to Mn luminescence by providing additional [AlO] and [MgO] octahedrons for Mn occupancy. Further, these sites reduced the natural reduction probability of Mn to Mn in [AlO] tetrahedrons, which was confirmed using cathodoluminescence analysis for the first time. A cationic substitution strategy was employed on MgMGeO: Mn to improve the luminescence, and MgBaMGeO: Mn (M = Al, Ga) phosphors were synthesized. Partial substitution of larger Ba ions in Mg sites caused structural distortions and generated a new Ba impurity phase, which improved the photoluminescence. Compositionally tuned MgBaAlGeO: 0.005Mn exhibited a 35-fold higher emission than that of MgGaGeO: 0.005Mn. Additionally, this could retain 70% of its ambient emission intensity at 453 K. A warm WLED with a correlated color temperature (CCT) of 3730 K and a CRI of 89 was fabricated by combining the optimized red component with YAlO: Ce and 410 nm blue LED. By tuning the ratio of blue (BaMgAlO: Eu), green (CeTbMgAlO), and red (MgBaAlGeO: 0.005Mn) phosphors, another WLED was developed using a 280 nm UV-LED chip. This showed natural white emission with a CRI of 79 and a CCT of 5306 K. Meanwhile, three red LEDs were also fabricated using the MgBaAlGeO: 0.005Mn phosphor with commercial sources. These could be potential pc-LEDs for plant growth applications.
含锰氧化物的红色发射激发了高显色性且经济高效的白光发光二极管(WLED)的发展。基于这一事实,开发了一系列新的晶体学位点修饰的(Mg,Ba)MGeO:Mn(M = Al,Ga)组合物,它们在对紫外光和蓝光的反应中具有强烈的深红色发射。MgAlGeO主体由三个相组成:正交晶系的MgGaGeO、正交晶系的MgGeO和立方晶系的MgAlO。然而,MgGaGeO具有正交晶系晶体结构。有趣的是,MgAlGeO:Mn的发射强度比MgGaGeO:Mn高13倍,因为与[GaO]相比,Mn更倾向占据[AlO]位点。MgAlGeO:Mn中MgAlO和MgGeO的共存相通过为Mn占据提供额外的[AlO]和[MgO]八面体而有助于Mn发光。此外,这些位点降低了Mn在[AlO]四面体中还原为Mn的自然概率,这首次通过阴极发光分析得到证实。在MgMGeO:Mn上采用阳离子取代策略来改善发光性能,并合成了MgBaMGeO:Mn(M = Al,Ga)荧光粉。在Mg位点部分取代较大的Ba离子会引起结构畸变并产生新的Ba杂质相,从而改善了光致发光性能。成分调整后的MgBaAlGeO:0.005Mn的发射强度比MgGaGeO:0.005Mn高35倍。此外,在453 K时它能保留其室温发射强度的70%。通过将优化后的红色组分与YAlO:Ce和410 nm蓝色LED组合,制备了相关色温(CCT)为3730 K、显色指数(CRI)为89的暖白光WLED。通过调整蓝色(BaMgAlO:Eu)、绿色(CeTbMgAlO)和红色(MgBaAlGeO:0.005Mn)荧光粉的比例,使用280 nm紫外LED芯片开发了另一种WLED。它呈现出自然白光发射,显色指数为79,相关色温为5306 K。同时,还使用市售的MgBaAlGeO:0.005Mn荧光粉制备了三个红色LED。这些可能是用于植物生长应用的潜在功率型LED。