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对中文单词拼写差的人来说,对笔画顺序违规的右偏 N2 错误反应减少:中文阅读和拼写的事件相关电位标记研究。

Reduction in right lateralized N2 error response to stroke order violations in poor Chinese word spellers: A study on event-related potential markers for Chinese reading and spelling.

机构信息

Department of Psychology, Lingnan University, Tuen Mun, Hong Kong, China; Wofoo Joseph Lee Consulting and Counselling Psychology Research Centre, Lingnan University, Tuen Mun, Hong Kong, China.

School of Applied Psychology, Beijing Normal University at Zhuhai, Zhuhai City, Guangdong Province 519088, China.

出版信息

J Exp Child Psychol. 2023 May;229:105625. doi: 10.1016/j.jecp.2023.105625. Epub 2023 Jan 24.

Abstract

Stroke order knowledge is critical for Chinese reading and spelling acquisition. Previous studies have demonstrated enhancements of the N2 and P3 event-related potential (ERP) components at the Pz electrode to stroke order violations of Chinese characters in younger adults. However, it remained unclear whether similar ERP responses could be found in children. The current study investigated the ERP responses to stroke order violations of Chinese characters in children and examined the associations of the ERP responses with children's Chinese reading and spelling performance. A total of 26 Grade 2 Hong Kong Chinese children observed stroke-by-stroke displays of Chinese characters and judged whether the Chinese characters were written in the correct order. The ERP results showed larger anterior N2 and posterior P3 at the midline electrodes to the incorrect strokes than to the correct strokes. In addition, a smaller right lateralized temporal N2 response to the incorrect strokes was found in poor spellers as compared with good spellers of Chinese. The effect of the right lateralized temporal N2 response on reading performance was fully mediated through spelling ability. These results demonstrated increases in the anterior N2 and posterior P3 responses to stroke order violation of Chinese characters in second graders and suggest the right lateralized N2 response as a potential neural marker of Chinese literacy development in children.

摘要

笔画顺序知识对于中文阅读和拼写习得至关重要。先前的研究表明,在年轻成年人中,Pz 电极的 N2 和 P3 事件相关电位(ERP)成分对汉字的笔画顺序违规会增强。然而,目前尚不清楚在儿童中是否能找到类似的 ERP 反应。本研究调查了儿童对汉字笔画顺序违规的 ERP 反应,并探讨了 ERP 反应与儿童中文阅读和拼写表现之间的关系。共有 26 名香港二年级小学生观察汉字的逐笔显示,并判断汉字的书写顺序是否正确。ERP 结果表明,与正确笔画相比,不正确笔画在中线电极上引起更大的前 N2 和后 P3。此外,与中文拼写能力较好的学生相比,拼写能力较差的学生在后侧颞叶的右侧偏化 N2 反应对不正确的笔画反应较小。右侧颞叶 N2 反应对阅读表现的影响完全通过拼写能力来介导。这些结果表明,二年级学生对汉字笔画顺序违规的前 N2 和后 P3 反应增强,并提示右侧颞叶 N2 反应可能是儿童中文识字发展的潜在神经标志物。

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