Université de Bordeaux, ISM, UMR 5255, F-33400 Talence, France.
Centro de Física de Materiales CFM/MPC (CSIC-UPV/EHU), Paseo Manuel de Lardizabal 5, 20018 Donostia-San Sebastián, Spain.
J Phys Chem Lett. 2023 Feb 9;14(5):1246-1252. doi: 10.1021/acs.jpclett.2c03684. Epub 2023 Jan 31.
Hydrogen molecules dissociate on clean W(110) surfaces. This reaction is progressively inhibited as the tungsten surface is precovered with oxygen. We use density functional theory and ab initio molecular dynamics to rationalize, at the atomic scale, the influence of the adsorbed O atoms on the H dissociation process. The reaction probability is calculated for kinetic energies below 300 meV and different O nominal coverages. We show that the adsorbed O atoms act as repulsive centers that modulate the dynamics of the impinging H molecules by closing dissociation pathways. In agreement with existing experimental information, H dissociation is absent for an O coverage of half a monolayer. The results show that the influence of O adsorbates on the dissociation dynamics on W(110) goes much beyond the blocking of possible H adsorption sites. Adsorbed O atoms create a sort of chemical shield at the surface that prevents further approach and dissociation of the H molecules.
氢分子在清洁的 W(110)表面上发生离解。随着钨表面被氧预覆盖,这种反应逐渐受到抑制。我们使用密度泛函理论和从头算分子动力学,从原子尺度上合理地解释了吸附氧原子对 H 离解过程的影响。在低于 300 meV 的动能和不同的 O 名义覆盖率下,计算了反应概率。我们表明,吸附的 O 原子作为排斥中心,通过关闭离解途径来调节冲击 H 分子的动力学。与现有实验信息一致,当 O 覆盖率为单层的一半时,H 离解不存在。结果表明,O 吸附物对 W(110)上离解动力学的影响远远超出了对可能的 H 吸附位的阻挡。吸附的 O 原子在表面上形成一种化学屏蔽,阻止 H 分子进一步接近和离解。