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厘米尺度的具有高迁移率和宽带光响应的 PdS 超薄薄膜。

Centimeter-Scale PdS Ultrathin Films with High Mobility and Broadband Photoresponse.

机构信息

Hunan Provincial Key Laboratory of Two-Dimensional Materials, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, School of Physics and Electronics, Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China.

State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China.

出版信息

Small. 2023 Apr;19(17):e2206915. doi: 10.1002/smll.202206915. Epub 2023 Feb 1.

Abstract

2D materials with mixed crystal phase will lead to the nonuniformity of performance and go against the practical application. Therefore, it is of great significance to develop a valid method to synthesize 2D materials with typical stoichiometry. Here, 2D palladium sulfides with centimeter scale and uniform stoichiometric ratio are synthesized via controlling the sulfurization temperature of palladium thin films. The relationship between sulfurization temperature and products is investigated in depth. Besides, the high-quality 2D PdS films are synthesized via sulfurization at the temperature of 450-550 °C, which would be compatible with back-end-of-line processes in semiconductor industry with considering of process temperature. The PdS films show an n-type semiconducting behavior with high mobility of 10.4 cm V s . The PdS photodetector presents a broadband photoresponse from 450 to 1550 nm. These findings provide a reliable way to synthesizing high-quality and large-area 2D materials with uniform crystal phase. The result suggests that 2D PdS has significant potential in future nanoelectronics and optoelectronic applications.

摘要

2D 材料的混合晶体相将导致性能的不均匀,不利于实际应用。因此,开发一种有效的方法来合成具有典型化学计量比的 2D 材料具有重要意义。在这里,通过控制钯薄膜的硫化温度,合成了具有厘米级和均匀化学计量比的 2D 硫化钯。深入研究了硫化温度与产物之间的关系。此外,通过在 450-550°C 的温度下进行硫化,合成了高质量的 2D PdS 薄膜,考虑到工艺温度,该薄膜与半导体工业后端工艺线兼容。PdS 薄膜表现出 n 型半导体行为,迁移率高达 10.4 cm V s 。PdS 光电探测器在 450-1550nm 的宽光谱范围内具有光响应。这些发现为合成高质量、大面积、具有均匀晶体相的 2D 材料提供了一种可靠的方法。结果表明,2D PdS 在未来的纳米电子学和光电子学应用中具有重要的应用潜力。

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