Department of Electrical and Computer Engineering, Texas A&M University, College Station, TX, 77840, USA.
Sci Rep. 2023 Feb 1;13(1):1817. doi: 10.1038/s41598-022-24914-y.
The first intentional memristor was physically realized in 2008 and the memcapacitor in 2019, but the realization of a meminductor has not yet been conclusively reported. In this paper, the first physical evidence of meminductance is shown in a two-terminal passive system comprised primarily of an electromagnet interacting with a pair of permanent magnets. The role of series resistance as a parasitic component which obscures the identification of potential meminductive behavior in physical systems is discussed in detail. Understanding and removing parasitic resistance as a "resistive flux" is explored thoroughly, providing a methodology for extracting meminductance from such a system. The rationale behind the origin of meminductance is explained from a generalized perspective, providing the groundwork that indicates this particular element is a realization of a fundamental circuit element. The element realized herein is shown to bear the three required and necessary fingerprints of a meminductor, and its place on the periodic table of circuit elements is discussed by extending the genealogy of memristors to meminductors.
第一个有意设计的忆阻器于 2008 年被实际制造出来，而忆流控器则是在 2019 年被实际制造出来，但至今尚未有文献报告可以实际制造出忆感器。在本文中，我们在一个由一个电磁铁和一对永磁体组成的二端无源系统中首次展示了电感器的物理证据。本文详细讨论了串联电阻作为寄生元件在物理系统中阻碍潜在的电感行为识别的作用。本文深入探讨了理解和消除寄生电阻作为“电阻磁通量”的方法，为从这种系统中提取电感提供了一种方法。本文还从广义的角度解释了电感的起源，为这一特殊元件是基本电路元件的实现提供了基础。本文所实现的元件被证明具有一个忆感器的三个必需特征，并且通过将忆阻器的族谱扩展到忆感器，讨论了其在电路元件周期表中的位置。
