Ito Akira, Miyamoto Atsushi, Kondo Naoaki, Harada Minoru
Hitachi, Ltd., Research and Development Group, 292 Yoshida-cho, Totsuka-ku, Yokohama, Kanagawa 244-0817, Japan.
Microscopy (Oxf). 2023 Oct 9;72(5):408-417. doi: 10.1093/jmicro/dfad009.
Scanning electron microscopy (SEM) has realized high-throughput defect monitoring of semiconductor devices. As miniaturization and complexification of semiconductor circuit patterns increase in recent years, so has the number of defects. There is thus a great need to further increase the throughput of SEM defect monitoring. Toward this end, we propose a deep learning-based super-resolution method that reproduces high-resolution (HR) images from corresponding low-resolution images. Image quality factors such as pattern contrast and sharpness are important in SEM HR images in order to evaluate the quality of printed circuit patterns. Our proposed method meets various image quality requirements by changing the loss calculation method pixelwise based on the pattern in the image. It realizes super-resolved images that compare favorably with actual HR images and can improve SEM throughput by 100% or more.
扫描电子显微镜(SEM)已实现对半导体器件的高通量缺陷监测。近年来,随着半导体电路图案的小型化和复杂化程度不断提高,缺陷数量也随之增加。因此,迫切需要进一步提高SEM缺陷监测的通量。为此,我们提出了一种基于深度学习的超分辨率方法,该方法可从相应的低分辨率图像中重建高分辨率(HR)图像。在SEM HR图像中,图案对比度和清晰度等图像质量因素对于评估印刷电路图案的质量非常重要。我们提出的方法通过基于图像中的图案逐像素地改变损失计算方法,满足了各种图像质量要求。它实现了与实际HR图像相比具有优势的超分辨率图像,并且可以将SEM通量提高100%或更多。