Faculty of Physics, University of Tabriz, Tabriz, Iran.
Research Institute for Applied Physics and Astronomy (RIAPA), University of Tabriz, Tabriz, Iran.
Sci Rep. 2023 Feb 4;13(1):2031. doi: 10.1038/s41598-023-29291-8.
In this study, we perform a simulation analysis to investigate the influence of p-type and n-type doping concentration in BHJ SCs using the drift-diffusion model. Specifically, we investigate the effect of doping on the charge carrier transport and calculate the above-mentioned device parameters. We show that doping the active layer can increase the cell characteristic parameters, that the results are in an excellent agreement with the experimental results previously reported in the literature. We also show that doping causes space charge effects which subsequently lead to redistribution of the internal electric field in the device. Our results reveal that higher doping levels lead to screening the electrical field in the P3HT:PCBM active region. This in turn forces the charge carrier transport to be solely dominated by the diffusion, consequently decreasing the performance of the device. We also show that doping of the active layer to an optimum level can effectively improve the charge transport. Moreover, we show that doping can create an Ohmic contact between the organic and cathode interface. Additionally, the charge carrier concentration profile shows that by increasing the dopant concentration, the [Formula: see text] can be improved remarkably. Upon doping the active layer, this indicates that illumination can simply reduce the series resistance in the device.
在这项研究中，我们使用漂移扩散模型对 BHJ SC 中的 p 型和 n 型掺杂浓度的影响进行了模拟分析。具体来说，我们研究了掺杂对载流子输运的影响，并计算了上述器件参数。结果表明，掺杂活性层可以提高电池的特性参数，这与文献中先前报道的实验结果非常吻合。我们还表明，掺杂会引起空间电荷效应，从而导致器件内部电场的重新分布。我们的结果表明，较高的掺杂水平会导致 P3HT:PCBM 活性区的电场屏蔽。这反过来又迫使载流子输运仅由扩散主导，从而降低器件的性能。我们还表明，在活性层中掺杂到最佳水平可以有效地改善电荷传输。此外，我们表明掺杂可以在有机和阴极界面之间形成欧姆接触。此外，载流子浓度分布表明，通过增加掺杂剂浓度，可以显著提高[公式：请参见文本]。在掺杂活性层后，这表明光照可以简单地降低器件中的串联电阻。
