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两步气相沉积法生长的 NbSe 薄膜超导性能的可调谐性。

Tunability of the Superconductivity of NbSe Films Grown by Two-Step Vapor Deposition.

机构信息

Department of Chemistry, National University of Singapore, Singapore 117549, Singapore.

Institute for Functional Intelligent Materials, Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore.

出版信息

Molecules. 2023 Jan 20;28(3):1059. doi: 10.3390/molecules28031059.

Abstract

Layered metallic transition-metal dichalcogenides (TMDCs) are ideal platforms for exploring their fascinating electronic properties at two-dimensional limits, such as their charge density wave (CDW) and superconductivity. Therefore, developing ways to improve the crystallization quality of TMDCs is urgently needed. Here we report superconductively tunable NbSe grown by a two-step vapor deposition method. By optimizing the sputtering conditions, superconducting NbSe films were prepared from highly crystalline Nb films. The bilayer NbSe films showed a superconducting transition temperature that was up to 3.1 K. Similar to the salt-assisted chemical vapor deposition (CVD) method, superconducting monolayer NbSe crystals were also grown from a selenide precursor, and the growth strategy is suitable for many other TMDCs. Our growth method not only provides a way to improve the crystalline quality of TMDC films, but also gives new insight into the growth of monolayer TMDCs. It holds promise for exploring two-dimensional TMDCs in fundamental research and device applications.

摘要

层状过渡金属二卤族化合物 (TMDCs) 是探索其在二维极限下迷人电子特性(如电荷密度波 (CDW) 和超导性)的理想平台。因此,迫切需要开发提高 TMDCs 结晶质量的方法。在这里,我们报告了通过两步气相沉积法生长的超导可调谐 NbSe。通过优化溅射条件,从高结晶度的 Nb 薄膜中制备出超导 NbSe 薄膜。双层 NbSe 薄膜表现出高达 3.1 K 的超导转变温度。与盐辅助化学气相沉积 (CVD) 方法类似,从硒化物前体中也生长出了超导单层 NbSe 晶体,并且该生长策略适用于许多其他 TMDCs。我们的生长方法不仅为提高 TMDC 薄膜的结晶质量提供了一种途径,而且为单层 TMDC 的生长提供了新的见解。它有望在基础研究和器件应用中探索二维 TMDC。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0876/9921890/cf124e59e473/molecules-28-01059-g001.jpg

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