Valencia-Acuna Pavel, Rudayni Fatimah, Rijal Kushal, Chan Wai-Lun, Zhao Hui
Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045, United States.
Department of Physics, Jazan University, Jazan 45142, Saudi Arabia.
ACS Nano. 2023 Feb 28;17(4):3939-3947. doi: 10.1021/acsnano.2c12577. Epub 2023 Feb 16.
We report the generation of long-lived and highly mobile photocarriers in hybrid van der Waals heterostructures that are formed by monolayer graphene, few-layer transition metal dichalcogenides, and the organic semiconductor FZnPc. Samples are fabricated by dry transfer of mechanically exfoliated MoS or WS few-layer flakes on a graphene film, followed by deposition of FZnPc. Transient absorption microscopy measurements are performed to study the photocarrier dynamics. In heterostructures of FZnPc/few-layer-MoS/graphene, electrons excited in FZnPc can transfer to graphene and thus be separated from the holes that reside in FZnPc. By increasing the thickness of MoS, these electrons acquire long recombination lifetimes of over 100 ps and a high mobility of 2800 cm V s. Graphene doping with mobile holes is also demonstrated with WS as the middle layers. These artificial heterostructures can improve the performance of graphene-based optoelectronic devices.
我们报道了在由单层石墨烯、少层过渡金属二卤化物和有机半导体FZnPc形成的混合范德华异质结构中产生长寿命且高迁移率的光载流子。通过将机械剥离的MoS或WS少层薄片干法转移到石墨烯薄膜上,随后沉积FZnPc来制备样品。进行瞬态吸收显微镜测量以研究光载流子动力学。在FZnPc/少层-MoS/石墨烯的异质结构中,FZnPc中激发的电子可以转移到石墨烯上,从而与FZnPc中存在的空穴分离。通过增加MoS的厚度,这些电子获得了超过100 ps的长复合寿命和2800 cm V s的高迁移率。以WS作为中间层也证明了石墨烯被可移动空穴掺杂。这些人工异质结构可以改善基于石墨烯的光电器件的性能。