胶体量子点插入 InGaN/GaN 量子阱模板中侧向扩展 GaN 纳米多孔结构中的光子颜色转换增强。

Photon color conversion enhancement of colloidal quantum dots inserted into a subsurface laterally-extended GaN nano-porous structure in an InGaN/GaN quantum-well template.

出版信息

Opt Express. 2023 Feb 13;31(4):6327-6341. doi: 10.1364/OE.478250.

Abstract

To improve the color conversion performance, we study the nanoscale-cavity effects on the emission efficiency of a colloidal quantum dot (QD) and the Förster resonance energy transfer (FRET) from quantum well (QW) into QD in a GaN porous structure (PS). For this study, we insert green-emitting QD (GQD) and red-emitting QD (RQD) into the fabricated PSs in a GaN template and a blue-emitting QW template, and investigate the behaviors of the photoluminescence (PL) decay times and the intensity ratios of blue, green, and red lights. In the PS samples fabricated on the GaN template, we observe the efficiency enhancements of QD emission and the FRET from GQD into RQD, when compared with the samples of surface QDs, which is attributed to the nanoscale-cavity effect. In the PS samples fabricated on the QW template, the FRET from QW into QD is also enhanced. The enhanced FRET and QD emission efficiencies in a PS result in an improved color conversion performance. Because of the anisotropic PS in the sample surface plane, the polarization dependencies of QD emission and FRET are observed.

摘要

为了提高颜色转换性能，我们研究了纳米腔对胶体量子点（QD）的发射效率以及从量子阱（QW）到 GaN 多孔结构（PS）中 QD 的Förster 共振能量转移（FRET）的影响。为此，我们在 GaN 模板和蓝 QW 模板中插入了发绿光的 QD（GQD）和发红光的 QD（RQD），并研究了光致发光（PL）衰减时间和蓝、绿、红光强度比的行为。在 GaN 模板上制备的 PS 样品中，与表面 QD 样品相比，我们观察到 QD 发射和 GQD 到 RQD 的 FRET 效率增强，这归因于纳米腔效应。在 QW 模板上制备的 PS 样品中，QW 到 QD 的 FRET 也得到了增强。PS 中增强的 FRET 和 QD 发射效率导致颜色转换性能的提高。由于样品表面平面上的各向异性 PS，观察到了 QD 发射和 FRET 的偏振依赖性。