Opt Express. 2023 Feb 13;31(4):6849-6861. doi: 10.1364/OE.480278.
We present detailed studies on exciton-photon coupling and polariton emission based on a poly(1,4-phenylenevinylene) copolymer, Super Yellow (SY), in a series of optical microcavities and optoelectronic devices, including light-emitting diode (LED) and light-emitting transistor (LET). We show that sufficiently thick SY microcavities can generate ultrastrong coupling with Rabi splitting energies exceeding 1 eV and exhibit spectrally narrow, nearly angle-independent photoluminescence following lower polariton (LP) mode dispersion. When the microcavity is designed with matched LP low-energy state and exciton emission peak for radiative pumping, the conversion efficiency from exciton to polariton emission can reach up to 80%. By introducing appropriate injection layers in a SY microcavity and optimizing the cavity design, we further demonstrate a high-performance ultrastrongly coupled SY LED with weakly dispersive electroluminescence along LP mode and a maximum external quantum efficiency (EQE) of 2.8%. Finally, we realize an ultrastrongly coupled LET based on vertical integration of a high-mobility ZnO transistor and a SY LED in a microcavity, which enables a large switching ratio, uniform emission in the ZnO pattern, and LP mode emission with a maximum EQE of 2.4%. This vertical LET addresses the difficulties of achieving high emission performance and precisely defining the emission area in typical planar LETs, and opens up the possibility of applying various strongly coupled emitters for advanced polariton devices and high-resolution applications.
我们提出了基于聚(1,4-亚苯基乙烯)共聚物 Super Yellow(SY)的一系列光学微腔和光电器件中的激子-光子耦合和极化激元发射的详细研究,包括发光二极管(LED)和发光晶体管(LET)。我们表明,足够厚的 SY 微腔可以产生超强度耦合,Rabi 分裂能超过 1 eV,并表现出随低极化激元(LP)模式色散的光谱窄、几乎角度独立的光致发光。当微腔设计具有匹配的 LP 低能量状态和辐射泵浦的激子发射峰时,从激子到极化激元发射的转换效率可达 80%。通过在 SY 微腔中引入适当的注入层并优化腔设计,我们进一步展示了一种高性能的超强度耦合 SY LED,其沿 LP 模式的电致发光具有弱色散,最大外量子效率(EQE)为 2.8%。最后,我们基于高迁移率 ZnO 晶体管和 SY LED 的垂直集成实现了超强度耦合 LET,其具有大的开关比、在 ZnO 图案中的均匀发射和具有最大 EQE 的 2.4%的 LP 模式发射。这种垂直 LET 解决了在典型平面 LET 中实现高发射性能和精确定义发射区域的困难,并为各种强耦合发射器在先进的极化激元器件和高分辨率应用中开辟了可能性。