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采用原子层沉积法沉积的 AlO 薄膜的室温键合。

Room-temperature bonding of AlO thin films deposited using atomic layer deposition.

机构信息

Graduate School of Information Science and Electrical Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, Japan.

出版信息

Sci Rep. 2023 Mar 3;13(1):3581. doi: 10.1038/s41598-023-30376-7.

DOI:10.1038/s41598-023-30376-7
PMID:36869072
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9984445/
Abstract

In this study, room-temperature wafer bonding of AlO thin films on Si thermal oxide wafers, which were deposited using atomic layer deposition (ALD), was realized using the surface-activated bonding (SAB) method. Transmission electron microscopy (TEM) observations indicated that these room-temperature-bonded AlO thin films appeared to work well as nanoadhesives that formed strong bond between thermally oxidized Si films. The perfect dicing of the bonded wafer into dimensions of 0.5 mm × 0.5 mm was successful, and the surface energy, which is indicative of the bond strength, was estimated to be approximately 1.5 J/m. These results indicate that strong bonds can be formed, which may be sufficient for device applications. In addition, the applicability of different AlO microstructures in the SAB method was investigated, and the effectiveness of applying ALD AlO was experimentally verified. This successful SAB of AlO thin films, which is a promising insulator material, opens the possibility of future room-temperature heterogenous integration and wafer-level packaging.

摘要

在这项研究中，使用表面活化键合（SAB）方法实现了使用原子层沉积（ALD）沉积的 AlO 薄膜在 Si 热氧化晶片上的室温晶圆键合。透射电子显微镜（TEM）观察表明，这些室温键合的 AlO 薄膜似乎可以作为纳米胶合剂使用，在热氧化 Si 薄膜之间形成强键合。成功地将键合晶片切割成 0.5mm×0.5mm 的尺寸，表面能（ bond strength 的指示）估计约为 1.5J/m。这些结果表明可以形成强键合，这对于器件应用可能足够了。此外，还研究了 SAB 方法中不同 AlO 微观结构的适用性，并通过实验验证了应用 ALD AlO 的有效性。这种有前途的绝缘体材料的 AlO 薄膜的成功 SAB 为未来的室温异质集成和晶圆级封装开辟了可能性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/904c/9984445/2b8d078647a3/41598_2023_30376_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/904c/9984445/0c964f805c87/41598_2023_30376_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/904c/9984445/260872d573db/41598_2023_30376_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/904c/9984445/71a652f59ed5/41598_2023_30376_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/904c/9984445/faf3b145b6a2/41598_2023_30376_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/904c/9984445/281d76fa21e4/41598_2023_30376_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/904c/9984445/37756b227d71/41598_2023_30376_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/904c/9984445/b49ce19798e6/41598_2023_30376_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/904c/9984445/2b8d078647a3/41598_2023_30376_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/904c/9984445/0c964f805c87/41598_2023_30376_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/904c/9984445/260872d573db/41598_2023_30376_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/904c/9984445/71a652f59ed5/41598_2023_30376_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/904c/9984445/faf3b145b6a2/41598_2023_30376_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/904c/9984445/281d76fa21e4/41598_2023_30376_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/904c/9984445/37756b227d71/41598_2023_30376_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/904c/9984445/b49ce19798e6/41598_2023_30376_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/904c/9984445/2b8d078647a3/41598_2023_30376_Fig8_HTML.jpg

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Thin-film lithium niobate-on-insulator waveguides fabricated on silicon wafer by room-temperature bonding method with silicon nanoadhesive layer.通过具有硅纳米粘合剂层的室温键合方法在硅晶片上制造的绝缘体上薄膜铌酸锂波导。
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