Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, China.
Small. 2023 Jun;19(23):e2207928. doi: 10.1002/smll.202207928. Epub 2023 Mar 8.
Photoelectric memristor has attracted many attentions thanks to their promising potential in optical communication chips and artificial vision systems. However, the implementation of an artificial visual system based on memristive devices remains a considerable challenge because most photoelectric memristors cannot recognize color. Herein, multi-wavelength recognizable memristive devices based on silver(Ag) nanoparticles (NPs) and porous silicon oxide (SiO ) nanocomposites are presented. Rely on the effects of localized surface plasmon resonance (LSPR) and optical excitation of Ag NPs in SiO , the set voltage of the device can be gradually reduced. Moreover, the current overshoot problem is alleviated to suppress conducting filament overgrowth after visible light irradiation with different wavelengths, resulting in diverse low resistance states (LRS). Taking advantage of the characteristics of controlled switching voltage and LRS resistance distribution, color image recognition is finally realized in the present work. X-ray photoelectron spectroscopy (XPS) and conductive atomic force microscopy (C-AFM) show that the light irradiation plays an important role on resistive switching (RS) process: the photo-assisted Ag ionization leads to a significant reduction of set voltage and overshoot current. This work provides an effective method toward the development of multi-wavelength-recognizable memristive devices for future artificial color vision system.
光电忆阻器由于在光学通信芯片和人工视觉系统中具有广阔的应用前景,因此受到了广泛关注。然而,基于忆阻器的人工视觉系统的实现仍然是一个相当大的挑战,因为大多数光电忆阻器无法识别颜色。在此,我们提出了一种基于银纳米颗粒(Ag NPs)和多孔氧化硅(SiO )纳米复合材料的多波长识别忆阻器。依靠局部表面等离子体共振(LSPR)和 Ag NPs 在 SiO 中的光学激发效应,器件的置位电压可以逐渐降低。此外,通过不同波长可见光照射,可以缓解电流过冲问题,抑制导电线丝的过度生长,从而产生不同的低阻态(LRS)。利用受控开关电压和 LRS 电阻分布的特点,最终在本工作中实现了彩色图像识别。X 射线光电子能谱(XPS)和导电原子力显微镜(C-AFM)表明,光照射对电阻开关(RS)过程起着重要作用:光辅助的 Ag 离子化导致置位电压和过冲电流显著降低。这项工作为未来的人工彩色视觉系统中多波长识别忆阻器的发展提供了一种有效的方法。