Chen Yuwei, Liu Yidong, Min Yonggang
School of Electromechanical Engineering, Guangdong University of Technology, No. 100 Waihuanxi Road, Guangzhou HEMC, Guangzhou 510006, China.
Polymers (Basel). 2023 Mar 1;15(5):1256. doi: 10.3390/polym15051256.
Recent studies have shown that introducing fluorinated groups into polyimide (PI) molecules can effectively reduce the dielectric constant (Dk) and dielectric loss (Df) of PIs. In this paper, 2,2'-bis[4-(4-aminophenoxy) phenyl]-1,1',1',1',3,3',3'-hexafluoropropane (HFBAPP), 2,2'-bis(trifluoromethyl)-4,4'-diaminobenzene (TFMB), diaminobenzene ether (ODA), 1,2,4,5-Benzenetetracarboxylic anhydride (PMDA), 3,3',4,4'-diphenyltetracarboxylic anhydride (s-BPDA) and 3,3',4,4'-diphenylketontetracarboxylic anhydride (BTDA) were selected for mixed polymerization to find the relationship between the structure of PIs and dielectric properties. Firstly, different structures of fluorinated PIs were determined, and were put into simulation calculation to learn how structure factors such as fluorine content, the position of fluorine atom and the molecular structure of diamine monomer affect the dielectric properties. Secondly, experiments were carried out to characterize the properties of PI films. The observed change trends of performance were found to be consistent with the simulation results, and the possible basis of the interpretation of other performance was made from the molecular structure. Finally, the formulas with the best comprehensive performance were obtained respectively. Among them, the best dielectric properties were 14.3%TFMB/85.7%ODA//PMDA with dielectric constant of 2.12 and dielectric loss of 0.00698.
最近的研究表明,将氟代基团引入聚酰亚胺(PI)分子中可以有效降低PI的介电常数(Dk)和介电损耗(Df)。本文选用2,2'-双[4-(4-氨基苯氧基)苯基]-1,1',1',1',3,3',3'-六氟丙烷(HFBAPP)、2,2'-双(三氟甲基)-4,4'-二氨基苯(TFMB)、二氨基苯醚(ODA)、1,2,4,5-苯四甲酸二酐(PMDA)、3,3',4,4'-二苯甲酮四羧酸二酐(BTDA)和3,3',4,4'-二苯醚四羧酸二酐(s-BPDA)进行混合聚合,以探究PI的结构与介电性能之间的关系。首先,确定了不同结构的含氟PI,并将其进行模拟计算,以了解氟含量、氟原子位置和二胺单体分子结构等结构因素如何影响介电性能。其次,开展实验对PI薄膜的性能进行表征。观察到的性能变化趋势与模拟结果一致,并从分子结构方面对其他性能的解释给出了可能的依据。最后,分别得到了综合性能最佳的配方。其中,介电性能最佳的是14.3%TFMB/85.7%ODA//PMDA,其介电常数为2.12,介电损耗为0.00698。